PSMN4R3-30BL,118 NXP Semiconductors, PSMN4R3-30BL,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN4R3-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 4.1 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 103 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN4R3-30BL
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
V
DSon
GS (th)
(V)
16
12
3
2
1
0
8
4
0
-60
junction temperature
of drain current; typical values
0
20
0
3
40
max
min
typ
60
V
GS
60
3.5
(V) =10
120
4
80
All information provided in this document is subject to legal disclaimers.
003a a c982
003aad237
T
I
j
D
(°C)
(A)
4.5
5
180
100
Rev. 1 — 22 March 2012
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
1.5
0.5
2
1
0
−60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
PSMN4R3-30BL
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2012. All rights reserved.
003aaa508
T
j
( ° C)
03aa27
180
9 of 15