PSMN4R3-30BL,118 NXP Semiconductors, PSMN4R3-30BL,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN4R3-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 4.1 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 103 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN4R3-30BL
Product data sheet
Fig 7.
Fig 9.
R
(mΩ)
DSon
(A)
I
100
D
12
80
60
40
20
8
4
0
0
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
1
T
j
5
= 175 °C
2
3
25 °C
10
V
All information provided in this document is subject to legal disclaimers.
4
003aad238
003aad241
GS
V
GS
(V)
(V)
15
5
Rev. 1 — 22 March 2012
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
I
D
10
10
10
10
10
10
(A)
100
I
D
80
60
40
20
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
0
0
3.5
1
4
10
5
min
1
PSMN4R3-30BL
2
3
V
typ
2
GS
(V) =2.5
© NXP B.V. 2012. All rights reserved.
V
4
GS
003aab271
003aad236
3
V
max
(V)
DS
(V)
3
5
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