PSMN4R3-30BL,118 NXP Semiconductors, PSMN4R3-30BL,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN4R3-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 4.1 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 103 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN4R3-30BL
Product data sheet
Fig 3.
10
10
(A)
I
10
D
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
All information provided in this document is subject to legal disclaimers.
(1)
DSon
1
= V
DS
Rev. 1 — 22 March 2012
/ I
D
N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK
DC
10
PSMN4R3-30BL
t
100 μs
p
1 ms
10 ms
100 ms
V
= 10 μs
DS
(V)
© NXP B.V. 2012. All rights reserved.
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