PSMN1R8-30BL,118 NXP Semiconductors, PSMN1R8-30BL,118 Datasheet - Page 2

• Manufacturer Part Number: PSMN1R8-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 1.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 270 W
• Factory Pack Quantity: 800

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
4. Marking
Table 4.
PSMN1R8-30BL
Product data sheet
Pin
1
2
3
mb
Type number
PSMN1R8-30BL
Type number
PSMN1R8-30BL
It is not possible to make connection to pin 2
Symbol Description
G
D
S
D
Pinning information
Ordering information
Marking codes
gate
drain
source
mounting base; connected to drain
D2PAK
Package
Name
[1]
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
Simplified outline
N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK
Marking code
PSMN1R8-30BL
SOT404 (D2PAK)
1
mb
2
3
PSMN1R8-30BL
Graphic symbol
mbb076
G
© NXP B.V. 2012. All rights reserved.
Version
SOT404
D
S
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