PSMN1R8-30BL,118 NXP Semiconductors, PSMN1R8-30BL,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN1R8-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 1.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 270 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN1R8-30BL
Product data sheet
Fig 3.
10
10
10
(A)
10
I
D
4
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
DSon
(1)
All information provided in this document is subject to legal disclaimers.
1
= V
DS
/ I
Rev. 1 — 22 March 2012
D
DC
N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK
10
PSMN1R8-30BL
t
100 ms
p
10 ms
100 μs
1 ms
= 10 μs
V
DS
(V)
© NXP B.V. 2012. All rights reserved.
003aad381
10
2
4 of 15