MOSFET N-CH 30V TO220AB

PSMN1R8-30PL,127

Manufacturer Part NumberPSMN1R8-30PL,127
DescriptionMOSFET N-CH 30V TO220AB
ManufacturerNXP Semiconductors
PSMN1R8-30PL,127 datasheet
 

Specifications of PSMN1R8-30PL,127

Input Capacitance (ciss) @ Vds10180pF @ 12VFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs1.8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)30VCurrent - Continuous Drain (id) @ 25° C100A
Vgs(th) (max) @ Id2.15V @ 1mAGate Charge (qg) @ Vgs170nC @ 10V
Power - Max270WMounting TypeThrough Hole
Package / CaseTO-220-3ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)1.8 mOhms
Drain-source Breakdown Voltage30 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current100 APower Dissipation270 W
Maximum Operating Temperature+ 175 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names568-5234  
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PSMN1R8-30PL
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
Rev. 02 — 2 November 2010
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
1.3 Applications
DC-to-DC converters
Load switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
Static characteristics
R
DSon
Dynamic characteristics
Q
GD
Q
G(tot)
Avalanche ruggedness
E
DS(AL)S
[1]
Continuous current is limited by package.
[2]
Measured 3 mm from package.
Quick reference data
Parameter
Conditions
≥ 25 °C; T
drain-source voltage
T
j
drain current
T
= 25 °C; V
mb
see
Figure 1
total power dissipation
T
= 25 °C; see
mb
junction temperature
drain-source on-state
V
= 10 V; I
GS
resistance
T
= 25 °C; see
j
see
Figure 12
gate-drain charge
V
= 4.5 V; I
GS
V
= 15 V; see
DS
total gate charge
see
Figure 15
non-repetitive
V
= 10 V; T
GS
drain-source avalanche
I
= 100 A; V
D
= 50 Ω; unclamped
energy
R
GS
Product data sheet
Suitable for logic level gate drive
sources
Motor control
Server power supplies
Min
Typ
≤ 175 °C
-
-
j
[1]
= 10 V;
-
-
GS
Figure 2
-
-
-55
-
[2]
= 25 A;
-
1.6
D
Figure
13;
= 25 A;
-
22
D
Figure
14;
-
83
= 25 °C;
-
-
j(init)
≤ 30 V;
sup
Max Unit
30
V
100
A
270
W
175
°C
1.8
mΩ
-
nC
-
nC
1.1
J

PSMN1R8-30PL,127 Summary of contents

  • Page 1

    ... PSMN1R8-30PL N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 Rev. 02 — 2 November 2010 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

  • Page 2

    ... N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved ...

  • Page 3

    ... V sup GS 003aad357 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL Min - = 20 kΩ - -20 [1] Figure 1 - [1] Figure 1 - Figure -55 -55 [ 100 A; - ...

  • Page 4

    ... PSMN1R8-30PL Product data sheet N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL 003aad381 10 μs 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved ...

  • Page 5

    ... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN1R8-30PL Product data sheet N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL Min Typ Max - 0.3 0.56 003aad080 t p δ ...

  • Page 6

    ... see Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL Min Typ Max = 25 ° -55 ° 1.3 1.7 2. ° 125 ° 200 = 25 °C ...

  • Page 7

    ... L = 4.7 Ω R G(ext see Figure /dt = -100 A/µ 003aad394 100 I (A) V (V) = 2.8 GS 2.6 2 (V) DS Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL Min Typ = 4 156 - 135 - ° 175 ° ° Transfer characteristics: drain current as a function of gate-source voltage; typical values ...

  • Page 8

    ... (V) GS Fig 10. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL 003aad401 100 I (A) D 003aab271 min typ max ( © NXP B.V. 2010. All rights reserved ...

  • Page 9

    ... T (°C) j Fig 12. Drain-source on-state resistance as a function of drain current; typical values 03aa27 120 180 ( ° Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL 003aad395 V (V) = 2 GS(pl) V ...

  • Page 10

    ... Fig 16. Input, output and reverse transfer capacitances 100 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL - function of drain-source voltage; typical values 003aad397 = 25 ° 0 (V) SD © NXP B.V. 2010. All rights reserved. 003aad399 ...

  • Page 11

    ... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

  • Page 12

    ... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN1R8-30PL v.2 20101102 • Modifications: Status changed from objective to product. • Various changes to content. PSMN1R8-30PL v.1 20100218 PSMN1R8-30PL Product data sheet N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 Data sheet status ...

  • Page 13

    ... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL © NXP B.V. 2010. All rights reserved ...

  • Page 14

    ... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 November 2010 PSMN1R8-30PL Trademarks © NXP B.V. 2010. All rights reserved ...

  • Page 15

    ... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 November 2010 Document identifier: PSMN1R8-30PL ...