PBSS2540MB,315 NXP Semiconductors, PBSS2540MB,315 Datasheet - Page 4

• Manufacturer Part Number: PBSS2540MB,315
• Description: Transistors Bipolar - BJT 40 V, 0.5 A NPN low VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS2540MB,315

• Rohs: yes

NXP Semiconductors
6. Thermal characteristics
Table 6.
[1]
[2]
[3]
PBSS2540MB
Product data sheet
Symbol
R
Fig 2.
Fig 3.
th(j-a)
Z
Z
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
3
2
10
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
-5
Thermal characteristics
duty cycle = 1
0.75
0.33
0
0.1
duty cycle =
0.05
0.01
0.5
0.2
1
0
Parameter
thermal resistance
from junction to
ambient
0.05
0.5
0.2
0.01
10
0.02
0.75
0.33
0.02
10
0.1
−4
-4
10
10
−3
-3
Conditions
All information provided in this document is subject to legal disclaimers.
in free air
10
10
−2
-2
Rev. 1 — 4 April 2012
2
10
10
−1
-1
40 V, 0.5 A NPN low VCEsat (BISS) transistor
1
1
[1][2]
[3][2]
10
10
2
.
PBSS2540MB
Min
-
-
10
10
Typ
-
-
2
2
© NXP B.V. 2012. All rights reserved.
t
t
p
p
006aab603
006aac985
(s)
(s)
Max
500
212
10
10
3
3
Unit
K/W
K/W
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