RX1214B300Y TRAY NXP Semiconductors, RX1214B300Y TRAY Datasheet

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RX1214B300Y TRAY

Manufacturer Part Number
RX1214B300Y TRAY
Description
Transistors Bipolar - BJT BULKTR TNS-MICP
Manufacturer
NXP Semiconductors
Datasheet
1.RX1214B300Y_TRAY.pdf (12 pages)

Specifications of RX1214B300Y TRAY

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
65 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
3 V
Collector-emitter Saturation Voltage
3 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-439
Continuous Collector Current
21 A
Maximum Power Dissipation
570 mW
Factory Pack Quantity
4
Part # Aliases
RX1214B300Y,114
Product specification
Supersedes data of June 1992
DATA SHEET
RX1214B300Y
NPN microwave power transistor
DISCRETE SEMICONDUCTORS
1997 Feb 19

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RX1214B300Y TRAY Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 ...

Page 2

Philips Semiconductors NPN microwave power transistor FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry improves power sharing ...

Page 3

Philips Semiconductors NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CES V emitter-base voltage EBO I collector current (DC total power ...

Page 4

Philips Semiconductors NPN microwave power transistor THERMAL CHARACTERISTICS T = 100 C unless otherwise specified j SYMBOL PARAMETER R thermal resistance from junction to mounting-base th j-mb R thermal resistance from mounting base to heatsink th mb-h Z thermal impedance ...

Page 5

Philips Semiconductors NPN microwave power transistor handbook, full pagewidth 4 2.5 0.59 input 50 2 12.5 1 Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity: = 10. r Fig.3 Wideband test circuit board for 1.2 to1.4 GHz ...

Page 6

Philips Semiconductors NPN microwave power transistor handbook, full pagewidth + j – 250 Fig.6 Input and optimum load impedances as functions of frequency; typical ...

Page 7

Philips Semiconductors NPN microwave power transistor PACKAGE OUTLINE handbook, full pagewidth 0.15 max 3.3 2.9 3.3 Dimensions in mm. Torque on nut: Max. 0.4 Nm Recommended screw: M3 Recommended pitch for mounting screw: 19 mm. 1997 Feb 19 12.85 max ...

Page 8

Philips Semiconductors NPN microwave power transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...

Page 9

Philips Semiconductors NPN microwave power transistor 1997 Feb 19 NOTES 9 Product specification RX1214B300Y ...

Page 10

Philips Semiconductors NPN microwave power transistor 1997 Feb 19 NOTES 10 Product specification RX1214B300Y ...

Page 11

Philips Semiconductors NPN microwave power transistor 1997 Feb 19 NOTES 11 Product specification RX1214B300Y ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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