RX1214B300Y TRAY NXP Semiconductors, RX1214B300Y TRAY Datasheet - Page 5

• Manufacturer Part Number: RX1214B300Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of RX1214B300Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 3 V
• Collector-emitter Saturation Voltage: 3 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-439
• Continuous Collector Current: 21 A
• Maximum Power Dissipation: 570 mW
• Factory Pack Quantity: 4
• Part # Aliases: RX1214B300Y,114

Philips Semiconductors
1997 Feb 19
handbook, halfpage
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.635 mm.
Permittivity:
t
p
input
50
= 150 s; = 5 %.
Fig.4
(W)
P L
400
300
200
1.18
1
2
r
Load power as a function of frequency;
typical values.
= 10.
2.5
1.26
0.59
12.5
1.34
Fig.3 Wideband test circuit board for 1.2 to1.4 GHz application.
4
P in = 60 W
4
40 W
1.42 f (GHz)
MBH904
10.5
1.5
12
5
handbook, halfpage
t
p
= 150 s; = 5 %.
(dB)
Fig.5
G p
10
10
9
8
7
6
1.18
Power gain as a function of frequency;
typical values.
1.5
1.5
1.5
1.26
1
2
3
5
0.59
RX1214B300Y
0.5
1.34
3.5
Product specification
1.5
f (GHz)
1
MBH903
4
1.42
MGK065
output
50