RX1214B300Y TRAY NXP Semiconductors, RX1214B300Y TRAY Datasheet - Page 2

• Manufacturer Part Number: RX1214B300Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of RX1214B300Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 3 V
• Collector-emitter Saturation Voltage: 3 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-439
• Continuous Collector Current: 21 A
• Maximum Power Dissipation: 570 mW
• Factory Pack Quantity: 4
• Part # Aliases: RX1214B300Y,114

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package with the base
connected to the flange.
QUICK REFERENCE DATA
Microwave performance at T
1997 Feb 19
Class-C
t
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
p
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power sharing and reduces
thermal resistance
Internal input and output matching networks for an easy
circuit design.
Common base class-C wideband amplifiers operating
under pulsed conditions, recommended for L-band
radar applications.
NPN microwave power transistor
MODE OF OPERATION
= 150 s;
= 5 %
mb
1.2 to 1.4
25 C in a common base class-C wideband amplifier.
(GHz)
f
V
(V)
50
CC
WARNING
2
olumns
PINNING - SOT439A
3
Top view
(W)
P
250
L
PIN
1
2
3
Fig.1 Simplified outline and symbol.
1
2
(dB)
G
collector
emitter
base connected to flange
7
P
DESCRIPTION
RX1214B300Y
3
Product specification
(%)
MAM045
35
C
b
see Fig 6
Z
( )
i
; Z
c
e
L