RX1214B300Y TRAY NXP Semiconductors, RX1214B300Y TRAY Datasheet - Page 3

• Manufacturer Part Number: RX1214B300Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of RX1214B300Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 3 V
• Collector-emitter Saturation Voltage: 3 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-439
• Continuous Collector Current: 21 A
• Maximum Power Dissipation: 570 mW
• Factory Pack Quantity: 4
• Part # Aliases: RX1214B300Y,114

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1997 Feb 19
handbook, halfpage
V
V
V
I
P
T
T
T
C
stg
j
sld
CBO
CES
EBO
tot
NPN microwave power transistor
SYMBOL
t
p
= 150 s; = 5 %
P tot
(W)
800
600
400
200
0
50
Fig.2
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
0
Power derating curve.
50
PARAMETER
100
150
T mb ( C)
MGD976
200
open emitter
R
open collector
t
t
T
at 0.2 mm from case; t
p
p
mb
BE
150 s; = 5 %
150 s; = 5 %;
= 75 C
= 0
3
CONDITIONS
10 s
65
MIN.
RX1214B300Y
65
60
3
21
570
+200
200
235
Product specification
MAX.
V
V
V
A
W
C
C
C
UNIT