MT45W1MW16BAFB-706 WT Micron Technology Inc, MT45W1MW16BAFB-706 WT Datasheet - Page 47

• Manufacturer Part Number: MT45W1MW16BAFB-706 WT
• Description: IC PSRAM 16MBIT 70NS 54FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BAFB-706 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 38:
Table 31:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
Symbol
t
t
t
t
t
t
t
t
AS
AW
BW
CEW
CW
DH
DW
HZ
Asynchronous WRITE Timing Parameters – WE#-Controlled
WE#-Controlled Asynchronous WRITE
Min
70
70
70
23
0
1
0
-70x
Max
7.5
DQ[15:0]
DQ[15:0]
8
LB#/UB#
A[20:0]
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
ADV#
WAIT
WE#
OUT
OE#
CE#
IN
Min
85
85
85
23
0
1
0
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
IH
OH
IH
IL
IL
IL
IL
IL
IL
OL
IL
IL
-856
t LZ
Max
7.5
High-Z
8
t WPH
t CEW
High-Z
Units
ns
ns
ns
ns
ns
ns
ns
ns
t AS
t WHZ
47
t CW
t BW
VALID ADDRESS
Symbol
t
t
t
t
t
t
t
LZ
OW
WC
WHZ
WP
WPH
WR
t AW
Maximum and Typical Standby Currents
t WC
t WP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
VALID INPUT
t DW
t WR
t HZ
Min
10
70
46
10
5
0
t OW
t DH
-70x
DON’T CARE
High-Z
Max
8
©2003 Micron Technology, Inc. All rights reserved.
Min
10
85
55
10
5
0
-856
Max
8
Units
ns
ns
ns
ns
ns
ns
ns