M58BW16FB4T3F NUMONYX, M58BW16FB4T3F Datasheet - Page 39

• Manufacturer Part Number: M58BW16FB4T3F
• Description: IC FLASH 16MBIT 45NS 80PQFP
• Manufacturer: NUMONYX

Specifications of M58BW16FB4T3F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (512K x 32)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 80-MQFP, 80-PQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M58BW16FB4T3FCT

Table 10.
1. X Don’t care; RA Read Address, RD Read Data, ID Device Code, IDA Identifier Address, IDD Identifier Data, SRD Status
2. The Manufacturer code, the Device code, the Burst Configuration Register, and the Block Protection Configuration Register
Read Memory Array
Read Electronic Signature
Read Status Register
Read Query
Clear Status Register
Block Erase
Erase All Main Blocks
Program
Write to Buffer and Program N+4 Write AAh E8h Write
Program/Erase Suspend
Program/Erase Resume
Set Burst Configuration
Register
Set Block Protection
Configuration Register
Clear Block Protection
Configuration Register
Register Data, PA Program Address; PD Program Data, QA Query Address, QD Query Data, BA Any address in the Block,
BCR Burst Configuration Register value, N+1 number of Words to program, BA Block address.
of each block are read using the Read Electronic Signature command.
Command
any block
OTP block
Commands
(2)
(1)
Š3 Write
1
1
2
2
2
2
1
1
2
2
2 Write
2 Write
2 Write
Write
Write
Write 55h
Write 55h
Write AAh
Write AAh
Write
Write
Write
Write
Op. Addr. Data
1st cycle
X
X
X
X
X
X
X
X
X
X
FFh Read
B0h
D0h
90h Read
70h
98h Read
50h
20h Write
80h Write
40h
10h
40h Write
60h Write BCRh
60h Write
60h Write
Write
Op.
2nd cycle
Addr.
AAh
IDA
RA
RA
BA
BA
BA
BA
PA
PA
Bus operations
Data
D0h
D0h
IDD
D0h
03h
01h
RD
RD
PD
PD
N
Read RA
Write
Op. Addr. Data Op. Addr. Data
3rd cycle
PA
RD
PD Write
4th cycle
X
39/87
D0h