M58BW16FB4T3F NUMONYX, M58BW16FB4T3F Datasheet - Page 40

• Manufacturer Part Number: M58BW16FB4T3F
• Description: IC FLASH 16MBIT 45NS 80PQFP
• Manufacturer: NUMONYX

Specifications of M58BW16FB4T3F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (512K x 32)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 80-MQFP, 80-PQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M58BW16FB4T3FCT

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Table 11.
1. BCR = Burst Configuration Register.
2. SBA is the start address of each block.
Table 12.
1. T
2. The minimum effective erase time is defined as the minimum time required between the last Erase
Full Chip Program
Double Word Program
512 Kbit Block Erase
128 Kbit Block Erase
64 Kbit Block Erase
Erase all main blocks
Program Suspend Latency time
Erase Suspend Latency time
Minimum effective erase time
Program/Erase cycles (per block)
Configuration Register
Burst Configuration
Resume command and the next Erase Suspend command for the internal Flash memory Program/Erase
controller to be able to execute its algorithm.
A
Block Protection
= –40 to 125 °C, V
Manufacturer
Register
Device
Code
Parameters
Read electronic signature
Program, Erase times and endurance cycles
DD
= 2.7 V to 3.6 V, V
(2)
M58BW16FT
M58BW16FB
M58BW32FT
M58BW32FB
Device
All
All
Min
DDQ
M58BW16F
= 2.6 V to V
Typ
0.8
0.6
15
15
45
1
SBA+02h
Amax-A0
00000h
00001h
00001h
00001h
00001h
00005h
100,000
Max
DD
1.6
1.2
20
35
60
10
30
40
2
.
(2)
(1)
Min
00000000h (Unprotected)
M58BW32F
00000001h (Protected)
Typ
0.8
0.6
15
15
30
1
0000883Ah
DQ31-DQ0
00000020h
00008839h
00008838h
00008837h
BCR
100,000
Max
1.6
1.2
(1)
20
35
50
10
30
40
2
cycles
Unit
μs
μs
μs
μs
s
s
s
s
s