M58BW16FB4T3F NUMONYX, M58BW16FB4T3F Datasheet - Page 47

• Manufacturer Part Number: M58BW16FB4T3F
• Description: IC FLASH 16MBIT 45NS 80PQFP
• Manufacturer: NUMONYX

Specifications of M58BW16FB4T3F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (512K x 32)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 80-MQFP, 80-PQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M58BW16FB4T3FCT

Table 17.
1. T
2. Sampled only, not 100% tested.
Table 18.
1. I
2. The Standby mode can be disabled by setting the Standby Disable bit (M14) of the Burst Configuration
I
DDP-UP
Symbol
I
Symbol
DD1
V
I
stable (t
Register to ‘1’.
I
I
I
V
V
I
DDB
V
V
DDP-UP
I
DD2
DD3
DD4
V
C
A
I
LKO
DD
LO
OH
OL
LI
C
IH
IH
IL
OUT
= 25 °C, f = 1 MHz.
(2)
IN
(1)
VDHPH
is the current needed from the device until RP goes to its logic high level when the power supply is
Input Leakage current
Output Leakage current
Supply current (Random
Read)
Supply current (power-up)
Supply current (Burst
Read)
Supply current (Standby)
Supply current (Program
or Erase)
Supply current
(Erase/Program Suspend)
Supply current (Standby
Disable)
Input Low voltage
Input High voltage (for DQ
lines)
Input High voltage (for
input only lines)
Output Low voltage
Output High voltage
CMOS
V
and Program lockout)
DD
Device capacitance
DC characteristics
Input capacitance
Output capacitance
). See
supply voltage (Erase
Parameter
Figure
Parameter
22and
Figure
(1)(2)
23.
0 V V
0 V V
Program, Erase in
E = V
E = V
Test condition
f
I
clock
OH
f
I
V
add
OL
E = RP =
DD
progress
Test condition
E = V
= –100 μA
IL
IL
= 100 μA
IN
OUT
= 6 MHz
= 75 MHz
V
, G = V
, G = V
± 0.2 V
V
OUT
IN
V
IH
= 0 V
DDQIN
V
= 0 V
DDQ
IH
IH
,
,
V
0.8V
0.8V
DDQ
–0.5
Min
DDQIN
DDQIN
–0.1
Typ
6
8
Typ
5
Max
12
8
V
0.2V
DDQ
Max
150
150
3.6
0.1
2.2
±1
±5
25
20
50
30
10
DDQIN
+ 0.3
Unit
pF
pF
Unit
47/87
mA
mA
mA
mA
mA
μA
μA
μA
μA
V
V
V
V
V
V