TC58DVM82A1FT Toshiba, TC58DVM82A1FT Datasheet - Page 20

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TC58DVM82A1FT

Manufacturer Part Number
TC58DVM82A1FT
Description
IC FLASH 256MBIT 50NS 48TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TC58DVM82A1FT

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
256M (32M x 8)
Speed
50ns
Interface
Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Sequential Read(1)(2)(3)
mode (3) outputs the contents of the redundant address locations only. When the pointer reaches the last address,
the device continues to output the data from this address ** on each RE clock signal.
RY
Read Mode (3)
Sequential Read modes (1) and (2) output the contents of addresses 0~m as shown above, while Sequential Read
CLE
ALE
16-byte redundancy area of the page. The start pointer is therefore set to a value between byte 512 and byte 527.
/
WE
CE
RE
BY
This mode allows the sequential reading of pages without additional address input.
Read mode (3) has the same timing as Read modes (1) and (2) but is used to access information in the extra
RY
00H
01H
/
BY
50H
(00H)
Figure 5. Read mode (3) operation
X8 : m=527 , n=512
X16 : m=263 , n=256
0
X8 : m=527,n=512
X16 : m=263,n=256
Sequential Read (1)
Address input
A
512
A0~A3
m
Busy
t
R
527
(01H)
Busy
Sequential Read (2)
Data output
TC58DVM82A1FT00/ TC58DVM82F1FT00
TC58DAM82A1FT00/ TC58DAM82F1FT00
n/2
A
redundant memory cells, while A4~A7 are ignored.
Once a 50H command has been issued, the pointer moves to
the redundant cell locations and only those 16 cells can be
addressed, regardless of the value of the A4-to-A7 address. (An
00H command is necessary to move the pointer back to the
0-to-511 main memory cell location.)
Addresses bits A0~A3 are used to set the start pointer for the
Busy
t
R
Data output
(50H)
Sequential Read (3)
2003_01_29 20/34
n
A
Busy
t
R
m

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