TC58DVM82A1FT Toshiba, TC58DVM82A1FT Datasheet - Page 33

• Manufacturer Part Number: TC58DVM82A1FT
• Description: IC FLASH 256MBIT 50NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

(14)
(15) Do not turn off the power before write/erase operation is complete. Avoid using the device when the battery is
low. Power shortage and/or power failure before write/erase operation is complete will cause loss of data and/or
damage to data.
Failure phenomena for Program and Erase operations
The following possible failure modes should be considered when implementing a highly reliable system.
Block
Page
Single Bit
The device may fail during a Program or Erase operation.
ECC: Error Correction Code
Block Replacement
Program
Erase
When an error occurs in an Erase operation, prevent future accesses to this bad block
(again by creating a table within the system or by using another appropriate scheme).
memory
FAILURE MODE
Buffer
Erase Failure
Programming
Failure
Programming
Failure
1
Error occurs
0
Status Read after Erase
Status Read after Program
(1) Block Verify after Program
(2) ECC
Figure 28.
TC58DVM82A1FT00/ TC58DVM82F1FT00
TC58DAM82A1FT00/ TC58DAM82F1FT00
DETECTION AND COUNTERMEASURE SEQUENCE
Block A
Block B
Block Replacement
Block Replacement
reprogram the data into another Block (Block B)
by loading from an external buffer. Then,
prevent further system accesses to Block A (by
creating a bad block table or by using an
another appropriate scheme).
Retry
When an error happens in Block A, try to
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