TC58DVM82A1FT Toshiba, TC58DVM82A1FT Datasheet - Page 3

• Manufacturer Part Number: TC58DVM82A1FT
• Description: IC FLASH 256MBIT 50NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE *(Ta =25°C, f= 1 MHz)
RY
SYMBOL
V
V
V
V
P
T
T
T
C
C
*
I/O16
I/O1
CLE
ALE
I/O8
/
WE
WP
solder
stg
opr
CC
CCQ
IN
I/O
D
IN
OUT
CE
RE
BY
or
to
SYMB0L
This parameter is periodically sampled and is not tested for every device.
Power Supply Voltage
I/O port Power Supply Voltage
Input Voltage for Control pins
Input/Output Voltage for I/O pins
Power Dissipation
Soldering Temperature(10s)
Storage Temperature
Operating Temperature
Input
Output
I/O Control circuit
Logic control
RY
RATING
/
BY
PARAMETER
0.6 V~V
Command register
Address register
Status register
TC58DVM82A1FT00/ TC58DVM82F1FT00
TC58DAM82A1FT00/ TC58DAM82F1FT00
Control
TC58DVxxxxx
CCQ
0.6~4.6
0.6~4.6
0.6~4.6
55~150
0~70
260
0.3
0.3 V ( ≦ 4.6 V)
HV generator
CONDITION
V
V
IN
OUT
VALUE
0 V
0 V
0.6 V~V
MIN
CCQ
TC58DAxxxx
0.6~4.6
0.6~2.6
0.6~2.6
55~150
0~70
260
Memory cell array
0.3
Column decoder
2003_01_29 3/34
V
0.3 V ( ≦ 2.6 V)
Column buffer
Data register
CCQ
Sense amp
MAX
10
10
V
CC
V
SS
UNIT
pF
pF
unit
°C
°C
°C
W
V
V
V