TC58DVM82A1FT Toshiba, TC58DVM82A1FT Datasheet - Page 6

• Manufacturer Part Number: TC58DVM82A1FT
• Description: IC FLASH 256MBIT 50NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58DVM82A1FT

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

PROGRAMMING AND ERASING CHARACTERISTICS
(Ta =0° to 70°C, V
RY
Note: (1) CE High to Ready time depends on the pull-up resistor tied to the
t
N
t
(1): Refer to Application Note (12) toward the end of this document.
PROG
BERASE
/
CE
RE
BY
SYMBOL
(2) Sequential Read is terminated when t
(Refer to Application Note (9) toward the end of this document.)
is less than 30 ns,
Programming Time
Number of Programming Cycles on Same
Page
Block Erasing Time
525
CC
PARAMETER
2.7 V to 3.6 V)
RY
526
/
BY
signal stays Ready.
527
TC58DVM82A1FT00/ TC58DVM82F1FT00
TC58DAM82A1FT00/ TC58DAM82F1FT00
CEH
is greater than or equal to 100 ns. If the RE to CE delay
A
MIN
t
CEH
Busy
100 ns
TYP.
200
2
A
: 0 to 30 ns
RY
MAX
1000
*
10
3
/
BY
pin.
2003_01_29 6/34
* : V
Busy signal is not output.
UNIT
ms
IH
s
or V
IL
NOTES
(1)