ISL6610ACRZ-T Intersil, ISL6610ACRZ-T Datasheet

ISL6610ACRZ-T

Manufacturer Part Number

ISL6610ACRZ-T

Description

IC MOSFET DRVR DUAL SYNC 16-QFN

Manufacturer

Intersil

Datasheet

1.ISL6610ACBZ.pdf (11 pages)

Specifications of ISL6610ACRZ-T

Configuration

High and Low Side, Synchronous

Input Type

PWM

Delay Time

18ns

Number Of Configurations

Number Of Outputs

High Side Voltage - Max (bootstrap)

36V

Voltage - Supply

4.5 V ~ 5.5 V

Operating Temperature

0°C ~ 70°C

Mounting Type

Surface Mount

Package / Case

16-VQFN Exposed Pad, 16-HVQFN, 16-SQFN, 16-DHVQFN

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Peak

Current page: 1 of 11
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Dual Synchronous Rectified MOSFET

Drivers

The ISL6610, ISL6610A integrates two ISL6609, ISL6609A

drivers with enable function removed and is optimized to

drive two independent power channels in a synchronous-

rectified buck converter topology. These drivers, combined

with an Intersil ISL63xx or ISL65xx multiphase PWM

controller, form a complete high efficiency voltage regulator

at high switching frequency.

The IC is biased by a single low voltage supply (5V),

minimizing driver switching losses in high MOSFET gate

capacitance and high switching frequency applications.

Each driver is capable of driving a 3nF load with less than

10ns rise/fall time. Bootstrapping of the upper gate driver is

implemented via an internal low forward drop diode,

reducing implementation cost, complexity, and allowing the

use of higher performance, cost effective N-Channel

MOSFETs. Adaptive shoot-through protection is integrated

to prevent both MOSFETs from conducting simultaneously.

The ISL6610, ISL6610A features 4A typical sink current for

the lower gate driver, enhancing the lower MOSFET gate

hold-down capability during PHASE node rising edge,

preventing power loss caused by the self turn-on of the lower

MOSFET due to the high dV/dt of the switching node.

The ISL6610, ISL6610A also features an input that

recognizes a high-impedance state, working together with

Intersil multiphase PWM controllers to prevent negative

transients on the controlled output voltage when operation is

suspended. This feature eliminates the need for the schottky

diode that may be utilized in a power system to protect the

load from negative output voltage damage.

In addition, the ISL6610As bootstrap function is designed to

prevent the BOOT capacitor from overcharging, should

excessively large negative swings occur at the transitions of

the PHASE node.

Applications

• Core Voltage Supplies for Intel® and AMD®

• High Frequency Low Profile High Efficiency DC/DC

• High Current Low Voltage DC/DC Converters

• Synchronous Rectification for Isolated Power Supplies

Microprocessors

Converters

AMD® is a registered trademark of Advanced Micro Devices, Inc. All other trademarks mentioned are the property of their respective owners.

Data Sheet

1-888-INTERSIL or 1-888-468-3774

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Features

• 5V Quad N-Channel MOSFET Drives for Two

• Pin-to-pin Compatible with ISL6614 (12V Drive)

• Adaptive Shoot-Through Protection

• 0.4Ω On-Resistance and 4A Sink Current Capability

• Supports High Switching Frequency

• BOOT Capacitor Overcharge Prevention (ISL6610A)

• Low V

• Power-On Reset

• QFN Package

• Pb-Free Plus Anneal Available (RoHS Compliant)

Related Literature

• Technical Brief TB389 “PCB Land Pattern Design and

• Technical Brief TB363 “Guidelines for Handling and

Ordering Information

Add “-T” suffix for tape and reel.

NOTE: Intersil Pb-free plus anneal products employ special Pb-free

material sets; molding compounds/die attach materials and 100%

matte tin plate termination finish, which are RoHS compliant and

compatible with both SnPb and Pb-free soldering operations. Intersil

Pb-free products are MSL classified at Pb-free peak reflow

temperatures that meet or exceed the Pb-free requirements of

IPC/JEDEC J STD-020.

ISL6610CBZ

ISL6610CRZ

ISL6610IBZ

ISL6610IRZ

ISL6610ACBZ 6610ACBZ

ISL6610ACRZ 66 10ACRZ

ISL6610AIBZ

ISL6610AIRZ

November 22, 2006

Synchronous Rectified Bridges

- Fast Output Rise and Fall

- Low Tri-State Hold-Off Time

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat

- Near Chip-Scale Package Footprint; Improves PCB

Surface Mount Guidelines for QFN (MLFP) Packages”

Processing Moisture Sensitive Surface Mount Devices

(SMDs)”

NUMBER

(Note)

No Leads-Product Outline

Utilization, Thinner Profile

PART

Internal Bootstrap Diode

Intersil (and design) is a registered trademark of Intersil Americas Inc.

6610CBZ

66 10CRZ

6610IBZ

66 10IRZ

6610AIBZ

66 10AIRZ

MARKING

PART

ISL6610, ISL6610A

-40 to +85 14 Ld SOIC

-40 to +85 16 Ld 4x4 QFN L16.4x4

-40 to +85 14 Ld SOIC

-40 to +85 16 Ld 4x4 QFN L16.4x4

0 to +70

RANGE

TEMP.

(°C)

14 Ld SOIC

16 Ld 4x4 QFN L16.4x4

14 Ld SOIC

16 Ld 4x4 QFN L16.4x4

PACKAGE

(Pb-Free)

FN6395.0

M14.15

DWG. #

PKG.

Related parts for ISL6610ACRZ-T

ISL6610ACRZ-T Summary of contents

Page 1

... ISL6610CRZ 66 10CRZ ISL6610IBZ 6610IBZ ISL6610IRZ 66 10IRZ ISL6610ACBZ 6610ACBZ ISL6610ACRZ 66 10ACRZ ISL6610AIBZ 6610AIBZ ISL6610AIRZ 66 10AIRZ Add “-T” suffix for tape and reel. NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations ...

Page 2

Pinouts ISL6610, ISL6610A (14 LD SOIC) TOP VIEW PWM1 PWM2 GND LGATE1 4 PVCC 5 10 PGND 6 LGATE2 7 Block Diagram PVCC VCC 4.9K PWM1 4.6K CONTROL VCC LOGIC 4.9K PWM2 4.6K GND ...

Page 3

Typical Application - Multiphase Converter Using ISL6610 Gate Drivers COMP FB V VSEN CC ISEN1 PWM1 PGOOD EN PWM2 ISEN2 MAIN CONTROL ISL65xx VID ISEN3 FS/DIS PWM3 PWM4 GND ISEN4 3 ISL6610, ISL6610A BOOT1 +5V UGATE1 VCC PHASE1 LGATE1 +5V ...

Page 4

Absolute Maximum Ratings Supply Voltage (PVCC, VCC -0. Input Voltage ( ...

Page 5

Electrical Specifications These specifications apply for T PARAMETER UGATE Turn-On Propagation Delay LGATE Turn-On Propagation Delay Tri-state to UG/LG Rising Propagation Delay OUTPUT (Note 4) Upper Drive Source Resistance Upper Drive Sink Resistance Lower Drive Source Resistance Lower Drive Sink ...

Page 6

... MOSFETs. For optimal performance, no more than 100pF parasitic capacitive load should be present on the PWM line of ISL6610, ISL6610A (assuming an Intersil PWM controller is used). Bootstrap Considerations This driver features an internal bootstrap diode. Simply adding an external capacitor across the BOOT and PHASE pins completes the bootstrap circuit. The ISL6610A’ ...

Page 7

PHASE node. Typically, such large negative excursions occur in high current applications 2 that use D -PAK and D-PAK MOSFETs or excessive layout parasitic inductance. The following ...

Page 8

PVCC BOOT HI1 LO1 G1 UGATE PHASE FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH PVCC C GD LGATE R G HI2 LO2 GI2 G2 GND FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON ...

Page 9

Therefore, if such a situation (when input bus powered up before the bias of the controller and driver is ready) could conceivably be encountered common practice to place a resistor (R ) across the gate and source ...

Page 10

... Dimensions D2 and E2 are for the exposed pads which provide improved electrical and thermal performance. 8. Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389. 9. Features and dimensions A2, A3, D1, E1, P & θ are present when Anvil singulation method is used and not present for saw singulation ...

Page 11

... Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use ...

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