ISL6609ACBZ-T Intersil, ISL6609ACBZ-T Datasheet - Page 5

• Manufacturer Part Number: ISL6609ACBZ-T
• Description: IC MOSFET DRVR SYNC BUCK 8-SOIC
• Manufacturer: Intersil

Specifications of ISL6609ACBZ-T

• Configuration: High and Low Side, Synchronous
• Input Type: PWM
• Delay Time: 18ns
• Current - Peak: 2A
• Number Of Configurations: 1
• Number Of Outputs: 2
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -

Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (V
BOOT Voltage (V
BOOT To PHASE Voltage (V
PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 27V (DC)
UGATE Voltage . . . . . . . . . . . . . . . . V
LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . .-40°C to +125°C
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . .-40°C to 100°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . 125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
Electrical Specifications
VCC SUPPLY CURRENT
Bias Supply Current
POR Rising
POR Falling
Hysteresis
PWM INPUT
Sinking Impedance
Source Impedance
Three-State Rising Threshold
Three-State Falling Threshold
Three-State Shutdown Holdoff Time
EN INPUT
EN LOW Threshold
EN HIGH Threshold
SWITCHING TIME (See Figure 1 on Page 7)
UGATE Rise Time (Note 4)
LGATE Rise Time (Note 4)
UGATE Fall Time (Note 4)
LGATE Fall Time (Note 4)
UGATE Turn-Off Propagation Delay
LGATE Turn-Off Propagation Delay
1. θ
2. θ
3. θ
JA
JA
JC
, “case temperature” location is at the center of the package underside exposed pad. See Tech Brief TB379 for details.
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
GND -8V (<20ns Pulse Width, 10μJ) to 30V (<100ns)
GND - 2.5V (<20ns Pulse Width, 5μJ) to VCC + 0.3V
PARAMETER
EN
V
BOOT-GND
PHASE
, V
PWM
- 5V (<20ns Pulse Width, 10μJ) to V
) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
). . . -0.3V to 27V (DC) or 36V (<200ns)
BOOT-PHASE
5
These specifications apply for T
limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
PHASE
) . . . . . . -0.3V to 7V (DC)
- 0.3V (DC) to V
R
R
-0.3V to 9V (<10ns)
SYMBOL
PWM_SNK
PWM_SRC
t
TSSHD
t
t
I
PDLU
PDLL
VCC
t
t
t
t
RU
RL
FU
FL
ISL6609, ISL6609A
PWM pin floating, V
V
V
t
V
V
V
V
V
V
BOOT
BOOT
PDLU
VCC
VCC
VCC
VCC
VCC
VCC
VCC
VCC
A
= 5V (100mV Hysteresis)
= 5V (100mV Hysteresis)
= 5V, 3nF Load
= 5V, 3nF Load
= 5V, 3nF Load
= 5V, 3nF Load
= 5V, Outputs Unloaded
= 5V, Outputs Unloaded
or t
= -40°C to 100°C, unless otherwise noted. Parameters with MIN and/or MAX
PDLL
TEST CONDITIONS
+ Gate Falling Time
Thermal Information
Thermal Resistance (Notes 1, 2, 3)
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to 150°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below
SOIC Package (Note 1) . . . . . . . . . . . .
QFN Package (Notes 2, 3). . . . . . . . . .
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
VCC
= 5V
2.75
3.10
MIN
2.2
1.0
3
-
-
-
-
-
-
-
-
-
-
-
-
TYP
4.25
1.70
3.41
132
400
3.4
3.0
1.3
1.6
8.0
8.0
8.0
4.0
20
18
25
4
θ
JA
(°C/W)
110
95
MAX
5.75
2.00
4.2
5.5
2.0
-
-
-
-
-
-
-
-
-
-
-
-
θ
April 27, 2009
JC
UNITS
N/A
FN9221.2
(°C/W)
36
mV
μA
kΩ
kΩ
ns
ns
ns
ns
ns
ns
ns
V
V
V
V