ISL6609ACBZ-T Intersil, ISL6609ACBZ-T Datasheet

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ISL6609ACBZ-T

Manufacturer Part Number
ISL6609ACBZ-T
Description
IC MOSFET DRVR SYNC BUCK 8-SOIC
Manufacturer
Intersil
Datasheet

Specifications of ISL6609ACBZ-T

Configuration
High and Low Side, Synchronous
Input Type
PWM
Delay Time
18ns
Current - Peak
2A
Number Of Configurations
1
Number Of Outputs
2
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-

Available stocks

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Manufacturer
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Price
Part Number:
ISL6609ACBZ-T
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Company:
Part Number:
ISL6609ACBZ-T
Quantity:
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Synchronous Rectified MOSFET Driver
The ISL6609, ISL6609A is a high frequency, MOSFET driver
optimized to drive two N-Channel power MOSFETs in a
synchronous-rectified buck converter topology. This driver
combined with an Intersil ISL63xx or ISL65xx multiphase
PWM controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V),
minimizing driver switching losses in high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3nF load with less than
10ns rise/fall time. Bootstrapping of the upper gate driver is
implemented via an internal low forward drop diode,
reducing implementation cost, complexity, and allowing the
use of higher performance, cost effective N-Channel
MOSFETs. Adaptive shoot-through protection is integrated
to prevent both MOSFETs from conducting simultaneously.
The ISL6609, ISL6609A features 4A typical sink current for
the lower gate driver, enhancing the lower MOSFET gate
hold-down capability during PHASE node rising edge,
preventing power loss caused by the self turn-on of the lower
MOSFET due to the high dV/dt of the switching node.
The ISL6609, ISL6609A also features an input that
recognizes a high-impedance state, working together with
Intersil multiphase PWM controllers to prevent negative
transients on the controlled output voltage when operation is
suspended. This feature eliminates the need for the schottky
diode that may be utilized in a power system to protect the
load from negative output voltage damage. In addition, the
ISL6609A’s bootstrap function is designed to prevent the
BOOT capacitor from overcharging, should excessively large
negative swings occur at the transitions of the PHASE node.
®
1
AMD® is a registered trademark of Advanced Micro Devices, Inc. All other trademarks mentioned are the property of their respective owners.
Data Sheet
Copyright Intersil Americas Inc. 2005, 2006, 2009. All Rights Reserved. Intel® is a registered trademark of Intel Corporation.
1-888-INTERSIL or 1-888-468-3774
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• 0.4Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency
• ISL6605 Replacement with Enhanced Performance
• BOOT Capacitor Overcharge Prevention (ISL6609A)
• Low V
• Low Bias Supply Current
• Enable Input and Power-On Reset
• QFN Package
• Pb-Free (RoHS Compliant)
Applications
• Core Voltage Supplies for Intel® and AMD®
• High Frequency Low Profile High Efficiency DC/DC
• High Current Low Voltage DC/DC Converters
• Synchronous Rectification for Isolated Power Supplies
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
- Fast Output Rise and Fall
- Ultra Low Three-State Hold-Off Time (20ns)
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
- Near Chip-Scale Package Footprint; Improves PCB
Microprocessors
Converters
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
No Leads-Product Outline
Efficiency and Thinner in Profile
F
April 27, 2009
Internal Bootstrap Diode
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
ISL6609, ISL6609A
FN9221.2

Related parts for ISL6609ACBZ-T

ISL6609ACBZ-T Summary of contents

Page 1

... CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | 1-888-INTERSIL or 1-888-468-3774 Intersil (and design registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2005, 2006, 2009. All Rights Reserved. Intel® registered trademark of Intel Corporation. ISL6609, ISL6609A FN9221.2 ...

Page 2

... ISL6609CBZ-T* ISL66 09CBZ ISL6609CRZ 609Z ISL6609CRZ-T* 609Z ISL6609IBZ ISL66 09IBZ ISL6609IBZ-T* ISL66 09IBZ ISL6609IRZ 09IZ ISL6609IRZ-T* 09IZ ISL6609ACBZ 6609 ACBZ ISL6609ACBZ-T* 6609 ACBZ ISL6609ACRZ 09AZ ISL6609ACRZ-T* 09AZ ISL6609AIBZ 6609 AIBZ ISL6609AIBZ-T* 6609 AIBZ ISL6609AIRZ 9AIZ ISL6609AIRZ-T* 9AIZ ISL6609AIRZ-TK* 9AIZ *Please refer to TB347 for details on reel specifications. ...

Page 3

Block Diagram VCC EN VCC PWM INTEGRATED 3Ω RESISTOR (R 3 ISL6609, ISL6609A ISL6609 and ISL6609A R BOOT SHOOT- 4.25k THROUGH PROTECTION CONTROL LOGIC 4k ) AVAILABLE ONLY IN ISL6609A BOOT BOOT UGATE PHASE VCC LGATE GND FN9221.2 April 27, ...

Page 4

Typical Application - Multiphase Converter Using ISL6609 Gate Drivers +5V +5V FB COMP VCC VSEN PWM1 PWM2 PGOOD PWM CONTROL (ISL63XX or ISL65XX) ISEN1 VID (OPTIONAL) ISEN2 FS/EN GND R IS REQUIRED FOR SPECIAL POWER SEQUENCING APPLICATIONS UGPH 4 ISL6609, ...

Page 5

... QFN Package (Notes 2, 3 -0. (DC) Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150°C -0. (<10ns) Maximum Storage Temperature Range . . . . . . . . . . . -65°C to 150°C Pb-Free Reflow Profile .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp - 0.3V (DC BOOT BOOT = -40°C to 100°C, unless otherwise noted. Parameters with MIN and/or MAX A SYMBOL ...

Page 6

Electrical Specifications These specifications apply for T limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. (Continued) PARAMETER UGATE Turn-On Propagation Delay LGATE Turn-On Propagation Delay Three-state to UG/LG Rising ...

Page 7

... MOSFETs. For optimal performance, no more than 100pF parasitic capacitive load should be present on the PWM line of ISL6609, ISL6609A (assuming an Intersil PWM controller is used). Bootstrap Considerations This driver features an internal bootstrap diode. Simply adding an external capacitor across the BOOT and PHASE pins completes the bootstrap circuit. The ISL6609A’ ...

Page 8

PHASE node. Typically, such large negative excursions occur in high current applications 2 that use D -PAK and ...

Page 9

VCC BOOT HI1 LO1 G1 UGATE PHASE FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH VCC C GD LGATE R G HI2 LO2 GI2 G2 GND FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON ...

Page 10

Therefore, the actual coupling effect should be examined using a very high impedance (10MΩ or greater) probe to ensure a safe design margin. – V ⎛ --------------------------------- - ⎜ dV ⋅ ------ - R C ⎜ dV ⋅ ⋅ dt ...

Page 11

Package Outline Drawing L8.3x3 8 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE Rev 2, 3/07 3.00 6 PIN 1 INDEX AREA (4X) 0.15 TOP VIEW ( 2. 60 TYP ) ( TYPICAL RECOMMENDED LAND PATTERN 11 ISL6609, ISL6609A ...

Page 12

... Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use ...

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