ISL6580CR Intersil, ISL6580CR Datasheet - Page 6

• Manufacturer Part Number: ISL6580CR
• Description: IC DRIVER HIGH SIDE FET 56-QFN
• Manufacturer: Intersil
• Type: High Side/Low Side Driverr

Specifications of ISL6580CR

• Input Type: Non-Inverting
• Number Of Outputs: 12
• On-state Resistance: 20 mOhm
• Current - Output / Channel: 25A
• Current - Peak Output: 35A
• Voltage - Supply: 5 V ~ 12 V
• Operating Temperature: 0°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 56-VQFN
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Absolute Maximum Ratings
V
V
V
V
V
ISW peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
ICC average . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A
MOSFET Gate Capacitance . . . . . . . . See Max Gate Drive section
All Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 3.6V
VSENN, VSENP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 3.6V
ESD Rating
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0
V
V
V
V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
SWITCHING FREQUENCY
Switching Frequency Switching Frequency Range
NGATE SIGNAL PARAMETERS; V
NGATE Voltage
NGATE Pullup
Resistance
NGATE Pulldown
Resistance
Gate Rise Time
Gate Fall Time
Turn on Delay Time
P Channel
RDS(on)
P Channel V
1. See “Bias Supply Power On Sequence” section.
2. θ
CC
DD
REF
DRIVE
CC
CC
DD
DRIVE
REF
Human Body Model (Per JEDEC JESD22-A114) . . . . . . . . 1.5KV
-V
Brief TB379 “Thermal Characterization of Packaged Semiconductor Devices”.
PARAMETER
(Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12V
(Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 3.6V
JA
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to V
(Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5V
SW
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to V
(Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5V
is measured with the component mounted on a “High Effective” Thermal Conductivity Board with “Direct Attach” Features. See Technical
(PChannel VBRSS). . . . . . . . . . . . . . . . . . . . . . . . . . .20V
BRSS
Voltage Swing for Driving External NFET (I
Pullup Resistance of ISL6580 for Biasing gate of External, Synchronous Rectifier,
N Channel MOSFETs
Pulldown Resistance of ISL6580 for Biasing gate of External, Synchronous
Rectifier, N Channel MOSFETs
Gate Rise Time of External NFET, Transition from 0.5 to 4.5V; into 3nF
Gate Fall Time of External NFET Transition from 4.5 to 0.5V; into 3nF
C
Static Drain-to-Source ON resistance of Internal P Channel FET,
ID =10 amps; Measured between V
Switch breakdown voltage of internal P Channel FET. ID = 1.5 mA
LOAD
POWER STAGE: INTERNAL P CHANNEL, HIGH SIDE SWITCH PARAMETERS
= 3nF
6
V
T
A
DD
DRIVE
= 25°C Unless Otherwise Specified
= 3.3VDC, V
= 5VDC
CC
TEST CONDITIONS
o
= 12VDC, V
C to 85
POWER STAGE: NGATE
CC
and V
POWER STAGE
DD
CC
o
C
ISL6580
DRIVE
DRIVE
SW
pins
= 2A)
= 5VDC, V
Thermal Information
Thermal Resistance
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . .150
Maximum Storage Temperature Range . . . . . . . . . . -65
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
Junction to bottom of case . . . N/A
Junction to top of case . . . . . . N/A
Junction to board (Note 2) . . . N/A
Still air (Note 2) . . . . . . . . . . . 26.0
100LFM (Note 2) . . . . . . . . . . 23.5
200LFM (Note 2) . . . . . . . . . . 22.3
400LFM (Note 2) . . . . . . . . . . 21.2
REF
= 2.5V, SYSCLK = 133.33MHz, SCLK = 16.67MHz,
θ
JA(
0.25
MIN
o
C/W)
TYP
1.3
0.4
25
20
20
θ
5
8
4
JB(
N/A
N/A
N/A
N/A
N/A
N/A
o
9
C/W)
MAX
1
o
θ
C to 175
JC(
12.0
N/A
UNITS
N/A
N/A
N/A
N/A
o
MHz
3
m
C/W)
ns
ns
ns
Ω
Ω
V
V
Ω
o
o
o
C
C
C