KSC5302D Fairchild Semiconductor, KSC5302D Datasheet

no-image

KSC5302D

Manufacturer Part Number
KSC5302D
Description
NPN Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2002 Fairchild Semiconductor Corporation
High Voltage High Speed Power Switch
Application
• High Breakdown Voltage : BV
• Built-in Free-wheeling Diode makes efficient anti saturation operation
• Suitable for half bridge light ballast Applications
• No need to interest an h
• Even though corner spirit product
• Low base drive requirement
NPN Silicon Transistor
Absolute Maximum Ratings
Thermal Characteristics
V
V
V
I
I
I
I
P
T
T
R
R
C
CP
B
BP
spread
J
STG
CBO
CEO
EBO
C
jc
ja
Symbol
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(T
Junction Temperature
Storage Temperature
Thermal Resistance
FE
value because of low variable storage-time
CBO
=800V
C
T
=25 C)
Parameter
C
=25 C unless otherwise noted
T
C
Characteristics
=25 C unless otherwise noted
KSC5302D
Junction to Case
Junction to Ambient
B
Equivalent Circuit
- 55 ~ 150
C
E
Value
800
400
150
12
50
2
5
1
2
1.Base
1
Rating
62.5
2.5
2.Collector
TO-220
Units
Rev. B1, December 2002
W
V
V
V
A
A
A
A
C
C
Unit
C/W
3.Emitter

Related parts for KSC5302D

KSC5302D Summary of contents

Page 1

... P Power Dissipation Junction Temperature J T Storage Temperature STG Thermal Characteristics Symbol R Thermal Resistance ©2002 Fairchild Semiconductor Corporation KSC5302D =800V B T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Characteristics Junction to Case Junction to Ambient Equivalent Circuit C TO-220 ...

Page 2

... Fall Time F t Storage Time STG t Fall Time F V Diode Forward Voltage F t *Reverse Recovery Time rr (di/dt = 10A/ s) *Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10% ©2002 Fairchild Semiconductor Corporation T =25 C unless otherwise noted C Test Condition I =1mA =5mA =1mA, I ...

Page 3

... 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. DC current Gain 125 -20 C 0.1 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Collector-Base Saturation Voltage ©2002 Fairchild Semiconductor Corporation 100 I = 200mA 180mA 160mA 140mA 120mA 100mA 80mA 60mA B I ...

Page 4

... I [A], FORWARD CURRENT f Figure 9. Reverse Recovery Time 100 10 5ms 1 DC 0.1 0.01 10 100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 11. Safe Operating Area ©2002 Fairchild Semiconductor Corporation (Continued 300V -2. 0.1 10 0.01 Figure 8. Forwrd Diode Voltage 1000 di/dt = 10A/ s 100 10 1 0.8 1.0 1 Figure 10. Collector Outpt Capacitance ...

Page 5

... Package Dimensions 1.27 2.54TYP [2.54 ©2002 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. B1, December 2002 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

Related keywords