MJD42 FAIRCHILD [Fairchild Semiconductor], MJD42 Datasheet
MJD42
Manufacturer Part Number
MJD42
Description
General Purpose Amplifier
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.MJD42.pdf
(5 pages)
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©2001 Fairchild Semiconductor Corporation
General Purpose Amplifier
Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP42C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
P
h
V
V
V
I
I
I
T
T
V
I
I
I
V
V
f
C
CP
B
CEO
CES
EBO
T
FE
C
J
STG
CBO
CEO
EBO
CEO
CE
BE
Symbol
Symbol
(on)
(sat)
(sus)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
* Collector-Emitter Sustaining Voltage
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Parameter
a
C
T
=25 C)
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
MJD42C
I
V
V
V
V
V
I
V
V
C
C
CE
CE
BE
CE
CE
CE
CE
= - 30mA, I
= -6A, I
= -5V, I
= -60V, I
= -4V, I
= -4V, I
= -6A, I
= -10V, I
= -100V, V
Test Condition
1
B
= -600mA
C
C
C
C
B
C
= 0
= -0.3A
= -3A
B
= -4A
= 0
= -500mA
BE
= 0
1.Base
= 0
D-PAK
2.Collector
- 65 ~ 150
Value
-100
-100
1.75
150
-10
20
-5
-6
-2
1
Min.
-100
30
15
3
3.Emitter
Max.
-0.5
-1.5
-50
-10
75
-2
I-PAK
Rev. A2, June 2001
Units
W
W
V
V
V
A
A
A
Units
MHz
C
C
mA
V
V
V
A
A
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MJD42 Summary of contents
Page 1
... DC Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (on) * Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T * Pulse Test: PW 300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation MJD42C 1 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition I ...
Page 2
Typical Characteristics 1000 100 10 1 -0.01 -0.1 I [A], COLLECTOR CURRENT C Figure 1. DC current Gain 1000 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Capacitance 10 1 0.1 0.01 -0.01 -0.1 I ...
Page 3
Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A2, June 2001 ...
Page 4
Package Demensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 ...
Page 5
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...