ATMEGA16A-MU Atmel, ATMEGA16A-MU Datasheet - Page 270
![MCU AVR 16K FLASH 16MHZ 44-QFN](/photos/12/13/121316/313-44-qfn_sml.jpg)
ATMEGA16A-MU
Manufacturer Part Number
ATMEGA16A-MU
Description
MCU AVR 16K FLASH 16MHZ 44-QFN
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA16A-MU
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-VQFN Exposed Pad
Processor Series
ATMEGA16x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
2-Wire, SPI, USART
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
32
Number Of Timers
3
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Package
44QFN EP
Device Core
AVR
Family Name
ATmega
Maximum Speed
16 MHz
Operating Supply Voltage
3.3|5 V
Controller Family/series
AVR MEGA
No. Of I/o's
32
Eeprom Memory Size
512Byte
Ram Memory Size
1KB
Cpu Speed
16MHz
Rohs Compliant
Yes
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32ATSTK500 - PROGRAMMER AVR STARTER KIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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26.7.4
270
ATmega16A
Programming the Flash
changed. A Chip Erase must be performed before the Flash and/or the EEPROM are
reprogrammed.
Note:
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
B. Load Address Low byte
C. Load Data Low Byte
D. Load Data High Byte
E. Latch Data
F. Repeat B through E until the entire buffer is filled or until all data within the page is loaded.
While the lower bits in the address are mapped to words within the page, the higher bits address
the pages within the FLASH. This is illustrated in
1. Load Command “Chip Erase”
2. Set XA1, XA0 to “10”. This enables command loading.
3. Set BS1 to “0”.
4. Set DATA to “1000 0000”. This is the command for Chip Erase.
5. Give XTAL1 a positive pulse. This loads the command.
6. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
7. Wait until RDY/BSY goes high before loading a new command.
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give XTAL1 a positive pulse. This loads the command.
1. Set XA1, XA0 to “00”. This enables address loading.
2. Set BS1 to “0”. This selects low address.
3. Set DATA = Address Low byte ($00 - $FF).
4. Give XTAL1 a positive pulse. This loads the address Low byte.
1. Set XA1, XA0 to “01”. This enables data loading.
2. Set DATA = Data Low byte ($00 - $FF).
3. Give XTAL1 a positive pulse. This loads the data byte.
1. Set BS1 to “1”. This selects high data byte.
2. Set XA1, XA0 to “01”. This enables data loading.
3. Set DATA = Data High byte ($00 - $FF).
4. Give XTAL1 a positive pulse. This loads the data byte.
1. Set BS1 to “1”. This selects high data byte.
2. Give PAGEL a positive pulse. This latches the data bytes. (See
waveforms)
1. The EEPRPOM memory is preserved during chip erase if the EESAVE Fuse is programmed.
Table 26-5 on page
Figure 26-2 on page
267. When programming the Flash,
Figure 26-3
271. Note that if less than
for signal
8154B–AVR–07/09
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