ATMEGA644V-10AU Atmel, ATMEGA644V-10AU Datasheet - Page 19

IC AVR MCU FLASH 64K 44TQFP

ATMEGA644V-10AU

Manufacturer Part Number
ATMEGA644V-10AU
Description
IC AVR MCU FLASH 64K 44TQFP
Manufacturer
Atmel
Series
AVR® ATmegar
Datasheets

Specifications of ATMEGA644V-10AU

Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
64KB (32K x 16)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TQFP, 44-VQFP
Processor Series
ATMEGA64x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
4 KB
Interface Type
2-Wire/SPI/USART
Maximum Clock Frequency
10 MHz
Number Of Programmable I/os
32
Number Of Timers
3
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 10-bit
Package
44TQFP
Device Core
AVR
Family Name
ATmega
Maximum Speed
10 MHz
For Use With
ATSTK600-TQFP44 - STK600 SOCKET/ADAPTER 44-TQFPATSTK600-DIP40 - STK600 SOCKET/ADAPTER 40-PDIP770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAG770-1005 - ISP 4PORT FOR ATMEL AVR MCU JTAG770-1004 - ISP 4PORT FOR ATMEL AVR MCU SPIATAVRISP2 - PROGRAMMER AVR IN SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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6.2.1
6.3
6.3.1
2593N–AVR–07/10
EEPROM Data Memory
Data Memory Access Times
EEPROM Read/Write Access
This section describes the general access timing concepts for internal memory access. The
internal data SRAM access is performed in two clk
Figure 6-3.
The ATmega644 contains 2 Kbytes of data EEPROM memory. It is organized as a separate
data space, in which single bytes can be read and written. The EEPROM has an endurance of at
least 100,000 write/erase cycles. The access between the EEPROM and the CPU is described
in the following, specifying the EEPROM Address Registers, the EEPROM Data Register, and
the EEPROM Control Register.
For a detailed description of SPI, JTAG and Parallel data downloading to the EEPROM, see
page
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in
lets the user software detect when the next byte can be written. If the user code contains instruc-
tions that write the EEPROM, some precautions must be taken. In heavily filtered power
supplies, V
period of time to run at a voltage lower than specified as minimum for the clock frequency used.
See Section “6.3.2” on page 20.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
299,
page
CC
Address
clk
is likely to rise or fall slowly on power-up/down. This causes the device for some
On-chip Data SRAM Access Cycles
Data
Data
303, and
WR
CPU
RD
page 287
Compute Address
for details on how to avoid problems in these situations.
T1
Memory Access Instruction
respectively.
Address valid
CPU
T2
Table
cycles as described in
6-2. A self-timing function, however,
Next Instruction
T3
ATmega644
Figure
6-3.
19

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