C8051F413-GM Silicon Laboratories Inc, C8051F413-GM Datasheet - Page 79

• Manufacturer Part Number: C8051F413-GM
• Description: IC 8051 MCU 16K FLASH 28QFN
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F41xr

Specifications of C8051F413-GM

• Program Memory Type: FLASH
• Program Memory Size: 16KB (16K x 8)
• Package / Case: 28-QFN
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 50MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number Of I /o: 20
• Ram Size: 2.25K x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.25 V
• Data Converters: A/D 20x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: C8051F4x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 2.25 KB
• Interface Type: I2C/SMBus/SPI/UART
• Maximum Clock Frequency: 50 MHz
• Number Of Programmable I/os: 20
• Number Of Timers: 4
• Operating Supply Voltage: 2 V to 5.25 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F410DK
• Minimum Operating Temperature: - 40 C
• On-chip Dac: 2-ch x 12-bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 770-1006 - ISP 4PORT FOR SILABS C8051F MCU336-1454 - ADAPTER PROGRAM TOOLSTICK F411336-1317 - KIT EVAL FOR C8051F411336-1314 - KIT DEV FOR C8051F41X
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1311

Table 7.1. Voltage Reference Electrical Characteristics
V
Internal Reference (REFBE = 1)
Output Voltage
V
V
Load Regulation
V
Power Supply Rejection
External Reference (REFBE = 0)
Input Voltage Range
Input Current
Bias Generators
ADC Bias Generator
Power Consumption (Internal)
DD
REF
REF
REF
= 2.0 V; –40 to +85 °C unless otherwise specified.
Short-Circuit Current
Temperature Coefficient
Turn-on Time
Parameter
25 °C ambient (REFLV = 0)
25 °C ambient (REFLV = 1), V
Load = 0 to 200 µA to GND
V
4.7 µF tantalum, 0.1 µF ceramic bypass
0.1 µF ceramic bypass
V
4.7 µF tantalum, 0.1 µF ceramic bypass
0.1 µF ceramic bypass
Sample Rate = 200 ksps; V
BIASE = ‘1’
DD
DD
= 2.5 V, V
= 2.5 V, V
REF
REF
Conditions
Rev. 1.1
= 1.5 V:
= 2.2 V:
REF
DD
= 2 V
= 2.5 V
C8051F410/1/2/3
1.47
2.16
Min
—
—
—
—
—
—
—
—
—
—
—
0
Typ
144
1.5
2.2
3.0
2.5
6.8
35
10
55
22
50
—
2
5
Max
1.53
2.24
V
—
—
—
—
—
—
—
—
—
—
—
DD
ppm/°C
ppm/µA
Units
mV/V
mA
ms
ms
µA
µA
µA
µs
µs
V
V
79