DF2266TF13V Renesas Electronics America, DF2266TF13V Datasheet - Page 556
DF2266TF13V
Manufacturer Part Number
DF2266TF13V
Description
IC H8S/2266 MCU FLASH 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet
1.DF2266TF20V.pdf
(712 pages)
Specifications of DF2266TF13V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
13MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
LCD, POR, PWM, WDT
Number Of I /o
67
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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Section 20 ROM
• Programmer mode
• Emulation function for flash memory in RAM
20.2
When the mode pins and the FWE pin are set in the reset state and a reset-start is executed, this
LSI enters an operating mode as shown in figure 20.2. In user mode, flash memory can be read but
not programmed or erased.
The boot, user program and programmer modes are provided as modes to write and erase the flash
memory.
Rev. 5.00 Sep. 01, 2009 Page 504 of 656
REJ09B0071-0500
Flash memory can be programmed/erased in programmer mode using a PROM programmer,
as well as in on-board programming mode.
The real-time emulation for programming of flash memory is possible by overlapping the flash
memory to a part of RAM.
Mode Transitions
Legend:
FLMCR1:
FLMCR2:
EBR1:
EBR2:
RAMER:
FLPWCR: Flash memory power control register
Flash memory control register 1
Flash memory control register 2
Erase block register 1
Erase block register 2
RAM emulation register
Figure 20.1 Block Diagram of Flash Memory
FLPWCR
FLMCR1
FLMCR2
RAMER
EBR1
EBR2
Internal data bus (16 bits)
Internal address bus
Bus interface/controller
Flash memory
Operating
mode
FWE pin
Mode pin
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