DF2266TF13V Renesas Electronics America, DF2266TF13V Datasheet - Page 672
DF2266TF13V
Manufacturer Part Number
DF2266TF13V
Description
IC H8S/2266 MCU FLASH 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet
1.DF2266TF20V.pdf
(712 pages)
Specifications of DF2266TF13V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
13MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
LCD, POR, PWM, WDT
Number Of I /o
67
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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Section 25 Electrical Characteristics
Notes: 1. Make each time setting in accordance with the program or erase algorithm.
Rev. 5.00 Sep. 01, 2009 Page 620 of 656
REJ09B0071-0500
2. Programming time per 128 bytes (Shows the total period for which the P1 bit in the
3. Block erase time (Shows the total period for which the E1 bit in FLMCR1 is set. It does
4. The maximum programming time value (t p (max.)):
5. For the maximum erase time (t
6. The minimum times that all characteristics after rewriting are guaranteed. (A range
7. The reference value at 25°C. (Normally, it is a reference that rewriting is enabled up to
8. Data hold characteristics when rewriting is performed within the range of specifications
flash memory control register (FLMCR1) is set. It does not include the programming
verification time.)
not include the erase verification time.)
t
(t
wait time after E1 bit setting (t
t
between 1 and minimum value is guaranteed.)
this value.)
including minimum value.
P
E
(max.) = Wait time after P1 bit setting (t
sp30
(max.) = Wait time after E1 bit setting (t
+ t
sp10
) × 6 + (t
sp200
) × 994
se
E
) and the maximum erase count (N):
(max.)), the following relationship applies between the
sp
se
) × maximum programming count (N)
) × maximum erase count (N)
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