DF2266TF13V Renesas Electronics America, DF2266TF13V Datasheet - Page 575
DF2266TF13V
Manufacturer Part Number
DF2266TF13V
Description
IC H8S/2266 MCU FLASH 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet
1.DF2266TF20V.pdf
(712 pages)
Specifications of DF2266TF13V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
13MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
LCD, POR, PWM, WDT
Number Of I /o
67
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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An example in which flash memory block area EB0 is overlapped is shown in figure 20.9.
1. The RAM area to be overlapped is fixed at a 4-kbyte area in the range H'FFD000 to
2. The flash memory area to be overlapped is selected by RAMER from a 4-kbyte area of the
3. The overlapped RAM area can be accessed from both the flash memory addresses and RAM
4. When the RAMS bit in RAMER is set to 1, program/erase protection is enabled for all flash
5. A RAM area cannot be erased by execution of software in accordance with the erase
6. Block area EB0 contains the vector table. When performing RAM emulation, the vector table
H'FFDFFF. In the H8S/2265, the RAM in this area is enabled only in RAM emulation mode.
EB0 to EB7 blocks.
addresses.
memory blocks (emulation protection). In this state, setting the P1 or E1 bit in FLMCR1 to 1
does not cause a transition to program mode or erase mode.
algorithm.
is needed in the overlap RAM.
Rev. 5.00 Sep. 01, 2009 Page 523 of 656
REJ09B0071-0500
Section 20 ROM
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