ATTINY25-15MZ Atmel, ATTINY25-15MZ Datasheet - Page 144

• Manufacturer Part Number: ATTINY25-15MZ
• Description: MCU AVR 2K FLASH 15MHZ 20-QFN
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY25-15MZ

• Package / Case: 20-QFN
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Speed: 16MHz
• Number Of I /o: 6
• Eeprom Size: 128 x 8
• Core Processor: AVR
• Program Memory Type: FLASH
• Ram Size: 128 x 8
• Program Memory Size: 2KB (2K x 8)
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Connectivity: USI
• Core Size: 8-Bit
• Processor Series: ATTINY2x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 128 B
• Interface Type: UART, SPI, USI
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 6
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 4 Channel
• Data Rom Size: 128 B
• A/d Bit Size: 10 bit
• A/d Channels Available: 4
• Height: 0.75 mm
• Length: 4 mm
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.7 V
• Width: 4 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

21.8
21.8.1
21.8.2
21.8.3
144
High-voltage Serial Programming Algorithm Sequence
ATtiny25/45/85
Enter High-voltage Serial Programming Mode
Considerations for Efficient Programming
Chip Erase
To program and verify the ATtiny25/45/85 in the High-voltage Serial Programming mode, the fol-
lowing sequence is recommended (See instruction formats in
The following algorithm puts the device in High-voltage Serial Programming mode:
Table 21-15. High-voltage Reset Characteristics
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
not reset until the Program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
re-programmed.
Note:
Supply Voltage
V
4.5V
5.5V
1. Apply 4.5 - 5.5V between V
2. Set RESET pin to “0” and toggle SCI at least six times.
3. Set the Prog_enable pins listed in
4. Apply V
5. Shortly after latching the Prog_enable signature, the device will activly output data on
6. Wait at least 50 µs before giving any serial instructions on SDI/SII.
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF that is the contents of the entire EEPROM (unless the
• Address High byte needs only be loaded before programming or reading a new 256 word
1. Load command “Chip Erase” (see
2. Wait after Instr. 3 until SDO goes high for the “Chip Erase” cycle to finish.
3. Load Command “No Operation”.
CC
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
t
been latched.
the Prog_enable[2]/SDO pin, and the resulting drive contention may increase the power
consumption. To minimize this drive contention, release the Prog_enable[2] pin after
t
HVRST
HVRST
1. The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
after the High-voltage has been applied to ensure the Prog_enable signature has
has elapsed.
HVRST
- 5.5V to RESET. Keep the Prog_enable pins unchanged for at least
RESET Pin High-voltage Threshold
CC
V
and GND.
11.5V
11.5V
HVRST
Table 21-14
Table
21-16).
(1)
to “000” and wait at least 100 ns.
memories plus Lock bits. The Lock bits are
Minimum High-voltage Period for
Table
Latching Prog_enable
21-16):
100 ns
100 ns
t
HVRST
7598H–AVR–07/09