ATTINY25-15MZ Atmel, ATTINY25-15MZ Datasheet - Page 146
ATTINY25-15MZ
Manufacturer Part Number
ATTINY25-15MZ
Description
MCU AVR 2K FLASH 15MHZ 20-QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheet
1.ATTINY25-15MZ.pdf
(196 pages)
Specifications of ATTINY25-15MZ
Package / Case
20-QFN
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Speed
16MHz
Number Of I /o
6
Eeprom Size
128 x 8
Core Processor
AVR
Program Memory Type
FLASH
Ram Size
128 x 8
Program Memory Size
2KB (2K x 8)
Data Converters
A/D 4x10b
Oscillator Type
Internal
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Connectivity
USI
Core Size
8-Bit
Processor Series
ATTINY2x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
128 B
Interface Type
UART, SPI, USI
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
6
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
Data Rom Size
128 B
A/d Bit Size
10 bit
A/d Channels Available
4
Height
0.75 mm
Length
4 mm
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.7 V
Width
4 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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21.8.5
21.8.6
21.8.7
21.8.8
21.8.9
21.8.10
146
ATtiny25/45/85
Programming the EEPROM
Reading the Flash
Reading the EEPROM
Programming and Reading the Fuse and Lock Bits
Reading the Signature Bytes and Calibration Byte
Power-off sequence
The EEPROM is organized in pages, see
EEPROM, the data is latched into a page buffer. This allows one page of data to be pro-
grammed simultaneously. The programming algorithm for the EEPROM Data memory is as
follows (refer to
The algorithm for reading the Flash memory is as follows (refer to
The algorithm for reading the EEPROM memory is as follows (refer to
The algorithms for programming and reading the Fuse Low/High bits and Lock bits are shown in
Table
The algorithms for reading the Signature bytes and Calibration byte are shown in
Set SCI to “0”. Set RESET to “1”. Turn V
1. Load Command “Write EEPROM”.
2. Load EEPROM Page Buffer.
3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Program-
4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
1. Load Command "Read Flash".
2. Read Flash Low and High Bytes. The contents at the selected address are available at
1. Load Command “Read EEPROM”.
2. Read EEPROM Byte. The contents at the selected address are available at serial out-
ming” cycle to finish.
programmed.
serial output SDO.
put SDO.
21-16.
Table
21-16):
CC
power off.
Table 21-11 on page
142. When programming the
Table
Table
21-16):
21-16):
Table
7598H–AVR–07/09
21-16.
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