ATMEGA324PA-AU Atmel, ATMEGA324PA-AU Datasheet - Page 301

MCU AVR 32K FLASH 20MHZ 40-TQFP

ATMEGA324PA-AU

Manufacturer Part Number
ATMEGA324PA-AU
Description
MCU AVR 32K FLASH 20MHZ 40-TQFP
Manufacturer
Atmel
Series
AVR® ATmegar

Specifications of ATMEGA324PA-AU

Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
32KB (16K x 16)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TQFP, 44-VQFP
Processor Series
ATMEGA32x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
2-Wire, SPI, USART
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
32
Number Of Timers
3
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATQT600
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Cpu Family
ATmega
Device Core
AVR
Device Core Size
8b
Frequency (max)
20MHz
Total Internal Ram Size
2KB
# I/os (max)
32
Number Of Timers - General Purpose
3
Operating Supply Voltage (typ)
2.5/3.3/5V
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
1.8V
Instruction Set Architecture
RISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Package Type
TQFP
Package
44TQFP
Family Name
ATmega
Maximum Speed
20 MHz
Operating Supply Voltage
2.5|3.3|5 V
Controller Family/series
AVR MEGA
No. Of I/o's
32
Eeprom Memory Size
1KB
Ram Memory Size
2KB
Cpu Speed
20MHz
Rohs Compliant
Yes
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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26.7
26.7.1
26.7.2
26.7.3
8272A–AVR–01/10
Parallel Programming
Enter Programming Mode
Considerations for Efficient Programming
Chip Erase
Table 26-13. Command Byte Bit Encoding
The following algorithm puts the device in parallel programming mode:
1. Apply 4.5 - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set the Prog_enable pins listed in
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after +12V
5. Wait at least 50 µs before sending a new command.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory locations.
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
164A/164PA/324A/324PA/644A/644PA/1284/1284P
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
100 ns.
has been applied to RESET, will cause the device to fail entering programming mode.
Command Byte
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
1000 0000
0100 0000
0010 0000
0001 0000
0001 0001
0000 1000
0000 0100
0000 0010
0000 0011
Command Executed
Chip Erase
Write Fuse bits
Write Lock bits
Write Flash
Write EEPROM
Read Signature Bytes and Calibration byte
Read Fuse and Lock bits
Read Flash
Read EEPROM
CC
and GND.
Table 26-11 on page 300
(1)
memories plus Lock bits. The Lock bits are
to “0000” and wait at least
301

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