SAK-XC888CLM-8FFA 5V AC Infineon Technologies, SAK-XC888CLM-8FFA 5V AC Datasheet - Page 59

IC MCU 8BIT FLASH 64-LQFP

SAK-XC888CLM-8FFA 5V AC

Manufacturer Part Number
SAK-XC888CLM-8FFA 5V AC
Description
IC MCU 8BIT FLASH 64-LQFP
Manufacturer
Infineon Technologies
Series
XC8xxr
Datasheet

Specifications of SAK-XC888CLM-8FFA 5V AC

Core Processor
XC800
Core Size
8-Bit
Speed
103.2MHz
Connectivity
CAN, LIN, SSI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
48
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
1.75K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
64-LFQFP
Data Bus Width
8 bit
Data Ram Size
1.75 KB
Interface Type
UART, SSC
Maximum Clock Frequency
24 MHz
Number Of Programmable I/os
48
Number Of Timers
4
Operating Supply Voltage
5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
For Use With
B158-H8743-X-X-7600IN - KIT STARTER XC886/888
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
Other names
SP000210982
3.3
The Flash memory provides an embedded user-programmable non-volatile memory,
allowing fast and reliable storage of user code and data. It is operated from a single 2.5 V
supply from the Embedded Voltage Regulator (EVR) and does not require additional
programming or erasing voltage. The sectorization of the Flash memory allows each
sector to be erased independently.
Features
1) P-Flash: 64-byte wordline can only be programmed once, i.e., one gate disturb allowed.
2) Values shown here are typical values.
3) Values shown here are typical values.
Data Sheet
D-Flash: 32-byte wordline can be programmed twice, i.e., two gate disturbs allowed.
frequency range for Flash read access.
programming and erasing.
In-System Programming (ISP) via UART
In-Application Programming (IAP)
Error Correction Code (ECC) for dynamic correction of single-bit errors
Background program and erase operations for CPU load minimization
Support for aborting erase operation
Minimum program width
1-sector minimum erase width
1-byte read access
Flash is delivered in erased state (read all zeros)
Operating supply voltage: 2.5 V ± 7.5 %
Read access time: 3 ×
Program time: 248256 /
Erase time: 9807360 /
Flash Memory
f
sysmin
f
t
SYS
CCLK
1)
f
SYS
is used for obtaining the worst case timing.
of 32-byte for D-Flash and 64-byte for P-Flash
= 102 ms
= 125 ns
= 2.6 ms
f
sys
f
sys
= 96 MHz ± 7.5% (
= 96 MHz ± 7.5% is the only frequency range for Flash
3)
2)
3)
52
f
CCLK
= 24 MHz ± 7.5 %) is the maximum
Functional Description
XC886/888CLM
V1.2, 2009-07

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