FDML7610S Fairchild Semiconductor, FDML7610S Datasheet - Page 10

• Manufacturer Part Number: FDML7610S
• Description: MOSFET N-CH 30V DUAL 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDML7610S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A, 17A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 15V
• Power - Max: 800mW, 900mW
• Mounting Type: Surface Mount
• Package / Case: *
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.006ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDML7610STR

©2010 Fairchild Semiconductor Corporation
FDML7610S Rev.C1
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 25 shows the reverse recovery
characteristic of the FDML7610S.
20
15
10
Figure 25. FDML7610S SyncFET body
diode reverse recovery characteristic
-5
5
0
0
50
100
TIME (ns)
di/dt = 300 A/
(continued)
150
μ
s
200
250
10
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10000
1000
100
Figure 26. SyncFET body diode reverse
leakage versus drain-source voltage
10
1
0
5
V
DS
10
, REVERSE VOLTAGE (V)
T
T
T
J
J
J
= 125
= 100
= 25
15
o
o
C
o
C
C
20
www.fairchildsemi.com
25
30