FDS86242 Fairchild Semiconductor, FDS86242 Datasheet
FDS86242
Specifications of FDS86242
Available stocks
Related parts for FDS86242
FDS86242 Summary of contents
Page 1
... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDS86242 FDS86242 ©2010 Fairchild Semiconductor Corporation FDS86242 Rev. C ® MOSFET General Description = 4.1 A This N-Channel D Semiconductor‘s advanced Power Trench = 3 been optimized for r ...
Page 2
... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting ° mH ©2010 Fairchild Semiconductor Corporation FDS86242 Rev 25°C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C I ...
Page 3
... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 20 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDS86242 Rev °C unless otherwise noted μ 5 100 125 150 - ...
Page 4
... LIMITED BY r DS(on 0.1 SINGLE PULSE T = MAX RATED 125 C/W θ 0.001 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDS86242 Rev °C unless otherwise noted J 1000 100 100 2000 1000 100us 100 ...
Page 5
... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDS86242 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...
Page 6
... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDS86242 Rev. C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...