FDMS7578 Fairchild Semiconductor, FDMS7578 Datasheet

MOSFET N-CH 25V DUAL POWER56

FDMS7578

Manufacturer Part Number
FDMS7578
Description
MOSFET N-CH 25V DUAL POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS7578

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.8 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
1625pF @ 13V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
25 V
Continuous Drain Current
28 A
Power Dissipation
33 W
Maximum Operating Temperature
+ 150 C
Forward Transconductance Gfs (max / Min)
77 S
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS7578TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS7578
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDMS7578 Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS7578
N-Channel Power Trench
25 V, 5.8 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology, engineered
for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS7578
DS(on)
DS(on)
Top
= 5.8 mΩ at V
= 8 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
= 4.5 V, I
Power 56
= 10 V, I
FDMS7578
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
= 14 A
= 17 A
D
T
A
D
®
= 25 °C unless otherwise noted
D
Parameter
MOSFET
D
Bottom
Power 56
Package
DS(on)
S
1
S
S
T
T
T
T
T
C
C
C
A
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
A
Pin 1
G
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Control MOSFET for Synchronous Buck Converters
Notebook
Server
Telecomm
High Efficiency DC-DC Switch Mode Power Supplies
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 4)
(Note 3)
D
D
D
D
6
8
5
7
DS(on),
Tape Width
12 mm
fast switching speed and body
-55 to +150
Ratings
±20
2.5
3.7
25
28
63
17
60
40
33
50
December 2009
www.fairchildsemi.com
3000 units
Quantity
4
3
2
1
Units
G
S
°C/W
S
S
mJ
°C
W
V
V
A

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FDMS7578 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS7578 FDMS7578 ©2009 Fairchild Semiconductor Corporation FDMS7578 Rev.C ® MOSFET General Description = 17 A This N-Channel MOSFET has been designed specifically to D improve the overall efficiency and to minimize switch node ...

Page 2

... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %. ° based on starting mH N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7578 Rev °C unless otherwise noted J Test Conditions = 250 µ 250 µ ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 60 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.0 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS7578 Rev °C unless otherwise noted µ 2 100 125 150 0 0.01 ...

Page 4

... Unclamped Inductive Switching Capability 100 10 THIS AREA IS 1 LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS7578 Rev °C unless otherwise noted J 2000 1000 100 100 Figure 10. ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE R θ JA 0.001 - FDMS7578 Rev °C unless otherwise noted 125 C RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ 100 ...

Page 6

... Dimensional Outline and Pad Layout FDMS7578 Rev.C 6 www.fairchildsemi.com ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS7578 Rev.C ® FlashWriter * Power-SPM™ FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ ...

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