BSS138K Fairchild Semiconductor, BSS138K Datasheet
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Manufacturer Part Number
BSS138K
Description
MOSFET N-CH 50V 220MA SOT-23-3
Manufacturer
Fairchild Semiconductor
Specifications of BSS138K
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 Ohm @ 50mA, 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
220mA
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
2.4nC @ 10V
Input Capacitance (ciss) @ Vds
58pF @ 25V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.5 Ohms
Forward Transconductance Gfs (max / Min)
200 mS
Drain-source Breakdown Voltage
50 V
Continuous Drain Current
0.22 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
2.4 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS138KTR
Available stocks
Manufacturer:
Fairchild Semiconductor
© 2010 Fairchild Semiconductor Corporation
BSS138K Rev. A2
BSS138K
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free/RoHS Compliant
• Green Compound
• ESD HBM=2000V as per JEDEC A114A ; ESD CDM = 2000V as per JEDEC C101C
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
Symbol
Symbol
V
V
T
R
P
DSS
GSS
T
STG
I
θJA
D
D
J
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Operating Junction Temperature Range
Storage Temperature Range
Total Device Dissipation
Derating above T
Thermal Resistance, Junction to Ambient *
A
= 25°C
Parameter
Parameter
D
Marking : SK
SOT - 23
T
A
G
= 25°C unless otherwise noted
Continuous
Pulsed
S
1
-55 to +150
-55 to +150
Value
Value
0.22
0.88
350
350
±12
2.8
50
mW/°C
Units
Units
www.fairchildsemi.com
°C/W
mW
°C
°C
May 2010
V
V
A
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BSS138K Summary of contents
... Thermal Characteristics Symbol P Total Device Dissipation D Derating above Thermal Resistance, Junction to Ambient * θJA * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size © 2010 Fairchild Semiconductor Corporation BSS138K Rev SOT - 23 Marking : 25°C unless otherwise noted A Parameter Continuous Pulsed Parameter = 25° ...
... Total Gate Change g Q Gate-Source Change gs Q Gate-Drain Change gd Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode V sd Forward Voltage © 2010 Fairchild Semiconductor Corporation BSS138K Rev 25°C unless otherwise noted A Test Condition = 0V, I =10µ =250µA, Referenced to 25° 50V, V ...
... V = 10V DS 2 -25( J 2.0 1.5 1.0 0.5 2.0 2.5 3.0 3.5 4 GATE-SOURCE VOLTAGE (V) GS © 2010 Fairchild Semiconductor Corporation BSS138K Rev. A2 Figure 2. On-Resistance Variation with Gate 2.00 1. 1.50 1.25 2V 1.00 0. Figure 4. On-Resistance Variation with 50 100 150 o C) Figure 6. Gate Threshold Variation with 1 ...
... Typical Performance Characteristics Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature 100 o 150 0.0 0.2 0 Body Diode Forward Voltage [V] SD © 2010 Fairchild Semiconductor Corporation BSS138K Rev. A2 (Continue -55 C 0.6 0.8 1.0 4 www.fairchildsemi.com ...
... Physical Dimensions © 2010 Fairchild Semiconductor Corporation BSS138K Rev. A2 SOT - 23 5 www.fairchildsemi.com ...
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...
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