FDME510PZT Fairchild Semiconductor, FDME510PZT Datasheet

MOSFET P-CH 20V 6-MICROFET

FDME510PZT

Manufacturer Part Number
FDME510PZT
Description
MOSFET P-CH 20V 6-MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDME510PZT

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
37 mOhm @ 6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Input Capacitance (ciss) @ Vds
1490pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
31 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 5 A
Power Dissipation
1.4 W
Forward Transconductance Gfs (max / Min)
21 S
Gate Charge Qg
16 nC
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDME510PZTTR
©2010 Fairchild Semiconductor Corporation
FDME510PZT Rev.C1
FDME510PZT
P-Channel PowerTrench
-20 V, -6 A, 37 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
Pin 1
θJA
θJA
Max r
Max r
Max r
Max r
Low profile:
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 2400V (Note3)
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
D
7T
= 37 mΩ at V
= 50 mΩ at V
= 65 mΩ at V
= 100 mΩ at V
D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
0.55 mm maximum in the new package
G
BOTTOM
GS
GS
GS
GS
FDME510PZT
MicroFET 1.6x1.6 Thin
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
D
= -1.5 V, I
Device
-Pulsed
D
D
D
D
D
S
= -6 A
= -4 A
= -3 A
= -2 A
T
®
A
= 25 °C unless otherwise noted
MOSFET
MicroFET 1.6x1.6 Thin
Parameter
Package
TOP
1
T
T
T
A
A
A
= 25 °C
= 25 °C
= 25 °C
General Description
This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for its physical size and is well suited to switching
and linear mode applications.
Reel Size
7 ’’
D
D
G
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Tape Width
8 mm
-55 to +150
Ratings
175
-20
-15
2.1
0.7
±8
60
-6
April 2010
www.fairchildsemi.com
5000 units
Quantity
Units
°C/W
°C
W
D
D
S
V
V
A

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FDME510PZT Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 7T FDME510PZT ©2010 Fairchild Semiconductor Corporation FDME510PZT Rev.C1 ® MOSFET General Description This device is designed specifically for battery charging or load = - switching in cellular handset and other ultraportable applications features a MOSFET with low on-state resistance. ...

Page 2

... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDME510PZT Rev. °C unless otherwise noted J Test Conditions = -250 µ ...

Page 3

... Junction Temperature 15 µ PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX 150 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDME510PZT Rev. °C unless otherwise noted -2 1 -1.5 V µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.0 1 100 125 150 ...

Page 4

... MAX RATED 175 C/W θ 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 500 100 Figure 11. ©2010 Fairchild Semiconductor Corporation FDME510PZT Rev. °C unless otherwise noted - - 100 100 PULSE WIDTH (s) Single Pulse Maximum Power Dissipation 4 5000 1000 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDME510PZT Rev. °C unless otherwise noted J SINGLE PULSE 175 C/W θ RECTANGULAR PULSE DURATION ( NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDME510PZT Rev.C1 6 www.fairchildsemi.com ...

Page 7

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDME510PZT Rev.C1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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