FDMS7580 Fairchild Semiconductor, FDMS7580 Datasheet

MOSFET N-CH 25V DUAL POWER56

FDMS7580

Manufacturer Part Number
FDMS7580
Description
MOSFET N-CH 25V DUAL POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS7580

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
1190pF @ 13V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
25 V
Continuous Drain Current
40 A
Power Dissipation
59 W
Maximum Operating Temperature
+ 150 C
Forward Transconductance Gfs (max / Min)
154 S
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS7580TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS7580
Manufacturer:
ON/安森美
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDMS7580 Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS7580
N-Channel Power Trench
25 V, 7.5 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology, engineered
for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS7580
DS(on)
DS(on)
Top
= 7.5 mΩ at V
= 11.1 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
Power 56
= 10 V, I
FDMS7580
-Continuous
-Continuous (Silicon limited)
-Pulsed
= 4.5 V, I
Device
D
D
= 15 A
D
= 12 A
T
A
D
®
= 25 °C unless otherwise noted
D
Parameter
MOSFET
D
Bottom
Power 56
Package
DS(on)
S
1
S
S
T
T
T
T
T
C
C
C
A
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
A
Pin 1
G
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Control MOSFET for Synchronous Buck Converters
Notebook
Server
Telecomm
High Efficiency DC-DC Switch Mode Power Supplies
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 4)
(Note 3)
D
D
D
D
6
8
5
7
DS(on),
Tape Width
12 mm
fast switching speed and body
-55 to +150
Ratings
±20
2.5
4.6
25
28
49
15
60
32
27
50
December 2009
www.fairchildsemi.com
3000 units
Quantity
4
3
2
1
Units
G
S
°C/W
S
S
mJ
°C
W
V
V
A

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FDMS7580 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS7580 FDMS7580 ©2009 Fairchild Semiconductor Corporation FDMS7580 Rev.C ® MOSFET General Description = 15 A This N-Channel MOSFET has been designed specifically to D improve the overall efficiency and to minimize switch node ...

Page 2

... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %. ° based on starting mH N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7580 Rev °C unless otherwise noted J Test Conditions = 250 µ 250 µ ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 60 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS7580 Rev °C unless otherwise noted µ 3 3 100 125 150 100 0 - 0.01 0.001 4 5 ...

Page 4

... Unclamped Inductive Switching Capability 100 10 1 THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS7580 Rev °C unless otherwise noted J 2000 1000 100 100 1000 µ ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE R θ JA 0.001 - FDMS7580 Rev °C unless otherwise noted 125 C RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ 100 1000 10 www ...

Page 6

... Dimensional Outline and Pad Layout FDMS7580 Rev.C 6 www.fairchildsemi.com ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS7580 Rev.C ® FlashWriter * Power-SPM™ FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ ...

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