FDMC7572S Fairchild Semiconductor, FDMC7572S Datasheet

MOSFET N-CH 25V 40A POWER33

FDMC7572S

Manufacturer Part Number
FDMC7572S
Description
MOSFET N-CH 25V 40A POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet

Specifications of FDMC7572S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.15 mOhm @ 22.5A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
22.5A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
2705pF @ 13V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
25 V
Continuous Drain Current
40 A
Power Dissipation
52 W
Maximum Operating Temperature
+ 150 C
Forward Transconductance Gfs (max / Min)
122 S
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMC7572STR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC7572S
Manufacturer:
FAIRCHILD/ON
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDMC7572S Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC7572S
N-Channel Power Trench
25 V, 40 A, 3.15 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
100% UIL Tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC7572S
DS(on)
DS(on)
= 3.15 mΩ at V
= 4.7 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
FDMC7572S
= 4.5 V, I
-Pulsed
Power 33
-Continuous (Silicon limited)
-Continuous
= 10 V, I
Device
D
D
= 18 A
= 22.5 A
T
D
A
®
= 25 °C unless otherwise noted
D
SyncFET
Parameter
D
D
Bottom
Power 33
Package
DS(on)
S
1
S
Pin 1
T
T
TM
T
T
T
S
C
C
General Description
The FDMC7572S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
A
A
C
DS(on)
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
G
while maintaining excellent switching performance. This
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 4)
(Note 3)
5
6
7
8
Tape Width
12 mm
-55 to +150
Ratings
22.5
±20
103
120
2.3
2.4
25
40
84
52
53
4
3
2
1
January 2010
www.fairchildsemi.com
3000 units
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
A
V

Related parts for FDMC7572S

FDMC7572S Summary of contents

Page 1

... FDMC7572S ©2010 Fairchild Semiconductor Corporation FDMC7572S Rev.C ® TM SyncFET General Description = 22.5 A The FDMC7572S has been designed to minimize losses in D power conversion application. Advancements in both silicon and = package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This ...

Page 2

... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %. ° based on starting mH N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMC7572S Rev °C unless otherwise noted J Test Conditions mA mA, referenced to 25 ° ...

Page 3

... Junction Temperature 120 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 125 1.0 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMC7572S Rev °C unless otherwise noted µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 100 125 150 200 100 o T ...

Page 4

... Switching Capability 200 100 10 THIS AREA IS 1 LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED J 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMC7572S Rev °C unless otherwise noted 100 100 2000 1000 100 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMC7572S Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK θJA θJA ...

Page 6

... MOSFET. Figure 13 shows the reverses recovery characteristic of the FDMC7572S di/dt = 300 100 TIME (ns) Figure 13. FDMC7572S SyncFET body diode reverse recovery characteristic FDMC7572S Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device µ ...

Page 7

... Dimensional Outline and Pad Layout FDMC7572S Rev.C 7 www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMC7572S Rev.C ® FlashWriter * Power-SPM™ FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ ...

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