APT60GF120JRDQ3 Microsemi Power Products Group, APT60GF120JRDQ3 Datasheet - Page 8

• Manufacturer Part Number: APT60GF120JRDQ3
• Description: IGBT 1200V 149A 625W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT60GF120JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 100A
• Current - Collector (ic) (max): 149A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 7.08nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT60GF120JRDQ3MI; APT60GF120JRDQ3MI

TYPICAL PERFORMANCE CURVES
Figure 2, Forward Voltage Drop vs Forward Current
Figure 4, Reverse Recovery Current vs Current Slew Rate
Figure 6, Reverse Recovery Time vs Current Slew Rate
200
160
120
300
240
180
120
80
40
60
45
30
15
60
0
0
0
di
di
V
F
F
0
0
0
F
/dt, CURRENT SLEW RATE (AMPERES/µSEC)
/dt, CURRENT SLEW RATE (AMPERES/µSEC)
, ANODE-TO-CATHODE VOLTAGE (VOLTS)
T
V
T
V
J
R
J
R
= 100°C
T
= 650V
= 100°C
T
= 650V
J
200
200
J
1
= 150°C
= 100°C
120A
400
400
2
60A
60A
600
600
3
30A
120A
T
J
T
= -55°C
J
800
= 25°C
800
4
30A
1000
1000
5
Figure 3, Reverse Recovery Charge vs Current Slew Rate
Figure 5, Dynamic Parameters vs Junction Temperature
Figure 7, Forward Recovery Voltage/Time vs Current Slew Rate
5000
4000
3000
2000
1000
1500
1250
1000
750
500
250
2.0
1.6
1.2
0.8
0.4
0.0
0
0
di
di
-50
10
F
0
F
/dt, CURRENT SLEW RATE (AMPERES/µSEC)
/dt, CURRENT SLEW RATE (AMPERES/µSEC)
t
T
rr
V
-25
J
R
T
T
V
= 100°C
J
J
I
= 650V
R
F
, JUNCTION TEMPERATURE (°C)
= 100°C
200
= 650V
= 60A
0
I
RRM
50
25
400
100
50
Q
V
rr
600
fr
t
fr
75
100 125
t
60A
rr
120A
800
Q
500
rr
APT60GF120JRD
30A
1000
1000
150
30
25
20
15
10
5
0