APT60GF120JRDQ3 Microsemi Power Products Group, APT60GF120JRDQ3 Datasheet - Page 9

• Manufacturer Part Number: APT60GF120JRDQ3
• Description: IGBT 1200V 149A 625W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT60GF120JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 100A
• Current - Collector (ic) (max): 149A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 7.08nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT60GF120JRDQ3MI; APT60GF120JRDQ3MI

APT's devices are covered by one or more of the following U.S.patents:
1
4
5
6
2
3
+15v
-15v
0v
I
di
I
t rr - Reverse Recovery Time Measured from Point of I
Q rr - Area Under the Curve Defined by I
diM/dt - Maximum Rate of Current Change During the Trailing Portion of t rr.
F
RRM
F
- Forward Conduction Current
/dt - Current Slew Rate, Rate of Forward
Current Falling Through Zero to a Tangent Line
Extrapolated Through Zero Defined by 0.75 and 0.50 I
- Peak Reverse Recovery Current.
Current Change Through Zero Crossing.
r = 4.0 (.157)
(2 places)
Figure 32, Diode Reverse Recovery Test Circuit and Wave Forms
Figure 33, Diode Reverse Recovery Wave Forms and Definitions
SOT-227 (ISOTOP
RRM
31.5 (1.240)
31.7 (1.248)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
di
7.8 (.307)
8.2 (.322)
and t rr .
F
5,256,583
4,895,810
/dt Adjust
Dimensions in Millimeters and (Inches)
{
F
4,748,103
5,045,903
6
®
) Package Outline
* Emitter/Anode
* Emitter/Anode
Zero
diM/dt
3.3 (.129)
3.6 (.143)
RRM
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
30µH
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
.
1
}
5,089,434
5,283,202
V r
TRANSFORMER
1.95 (.077)
2.14 (.084)
PEARSON 411
5,182,234
5,231,474
CURRENT
2
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
0.75 (.030)
0.85 (.033)
Collector/Cathode
Gate
Hex Nut M4
*
(4 places)
Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
D.U.T.
5,019,522
5,434,095
12.6 (.496)
12.8 (.504)
3
Q rr = 1 / 2
4
5
25.2 (0.992)
25.4 (1.000)
5,262,336
5,528,058
0.75 I RRM
(
0.5 I RRM
t rr . I
APT60GF120JRD
RRM
t rr / Q rr
Waveform
)
6