APTGT150A120T3AG Microsemi Power Products Group, APTGT150A120T3AG Datasheet - Page 3

• Manufacturer Part Number: APTGT150A120T3AG
• Description: IGBT ARRAY 1200V 220A 833W SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT150A120T3AG

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 150A
• Current - Collector (ic) (max): 220A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 10.7nF @ 25V
• Power - Max: 833W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGT150A120T3AGMP; APTGT150A120T3AGMP

Temperature sensor NTC
Thermal and package characteristics
Symbol Characteristic
Torque
Symbol
∆R
SP3 Package outline
V
R
T
∆B/B
B
Wt
T
T
ISOL
R
STG
thJC
25
25/85
C
J
25
/R
25
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Characteristic
Resistance @ 25°C
T
25
= 298.15 K
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
28
1
(dimensions in mm)
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).
⎡
⎢
⎣
B
25
/
85
R
⎛
⎜ ⎜
⎝
25
T
1
25
−
T
1
⎞
⎟ ⎟
⎠
www.microsemi.com
⎤
⎥
⎦
T: Thermistor temperature
R
T
: Thermistor value at T
17
12
To heatsink
APTGT150A120T3AG
T
C
=100°C
Diode
IGBT
M4
2500
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
5
4
Max
0.15
0.25
Max
150
125
100
110
4.7
°C/W
Unit
Unit
N.m
kΩ
°C
%
K
%
V
g
3 – 5