APTGT150A120T3AG Microsemi Power Products Group, APTGT150A120T3AG Datasheet - Page 5

• Manufacturer Part Number: APTGT150A120T3AG
• Description: IGBT ARRAY 1200V 220A 833W SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT150A120T3AG

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 150A
• Current - Collector (ic) (max): 220A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 10.7nF @ 25V
• Power - Max: 833W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGT150A120T3AGMP; APTGT150A120T3AGMP

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
100
0.3
0.2
0.1
0.00001
80
60
40
20
0
0
Operating Frequency vs Collector Current
10
Switching
0.05
0.9
0.7
0.5
ZCS
Hard
0.3
0.1
40
ZVS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
70
0.0001
100 130 160 190 220
I
C
(A)
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=2.2 Ω
=600V
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
Diode
Single Pulse
0.01
APTGT150A120T3AG
300
250
200
150
100
50
0
0
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
1.2
V
T
F
J
(V)
=25°C
1
1.6
T
J
=125°C
2
2.4
10
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