APTGT150A120T3AG Microsemi Power Products Group, APTGT150A120T3AG Datasheet - Page 4

• Manufacturer Part Number: APTGT150A120T3AG
• Description: IGBT ARRAY 1200V 220A 833W SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT150A120T3AG

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 150A
• Current - Collector (ic) (max): 220A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 10.7nF @ 25V
• Power - Max: 833W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGT150A120T3AGMP; APTGT150A120T3AGMP

Typical Performance Curve
300
250
200
150
100
300
250
200
150
100
40
35
30
25
20
15
10
0.16
0.12
0.08
0.04
Switching Energy Losses vs Gate Resistance
50
50
5
0
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
= 150A
= 125°C
0.05
= 600V
T
=15V
0.9
0.7
0.5
Output Characteristics (V
0.3
0.1
2
J
=125°C
6
Transfert Characteristics
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4
1
7
T
J
=25°C
6
0.0001
8
V
V
CE
GE
8
2
(V)
T
(V)
J
=25°C
9
10
T
10
J
12
GE
=125°C
T
3
Er
J
=15V)
=125°C
rectangular Pulse Duration (Seconds)
0.001
11
14
www.microsemi.com
Eon
Eoff
16
12
4
Single Pulse
0.01
APTGT150A120T3AG
300
250
200
150
100
350
300
250
200
150
100
30
25
20
15
10
50
50
5
0
0
0
0
0
0
V
T
R
Energy losses vs Collector Current
V
R
T
V
GE
J
G
T
Reverse Bias Safe Operating Area
0.1
CE
=125°C
J
G
GE
=2.2 Ω
J
= 125°C
=15V
= 2.2 Ω
= 125°C
= 600V
= 15V
50
400
1
Output Characteristics
100
V
V
I
V
C
CE
GE
800
CE
(A)
=17V
2
(V)
(V)
1
150
Eoff
1200
V
GE
3
200
IGBT
V
=15V
V
GE
GE
=13V
=9V
Eon
Er
1600
10
250
4
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