APT75GP120JDQ3 Microsemi Power Products Group, APT75GP120JDQ3 Datasheet - Page 3

• Manufacturer Part Number: APT75GP120JDQ3
• Description: IGBT 1200V 128A 543W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT75GP120JDQ3

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 75A
• Current - Collector (ic) (max): 128A
• Current - Collector Cutoff (max): 1.25mA
• Input Capacitance (cies) @ Vce: 7.04nF @ 25V
• Power - Max: 543W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT75GP120JDQ3MI; APT75GP120JDQ3MI

FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
160
140
120
100
250
200
150
100
80
60
40
20
50
0
0
5
4
3
2
1
0
-50
FIGURE 1, Output Characteristics(T
V
0
0
6
CE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
T
FIGURE 3, Transfer Characteristics
1
GE
250µs PULSE
T
-25
J
J
, GATE-TO-EMITTER VOLTAGE (V)
= 125°C
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
1
2
8
T
J
0
3
T
= 25°C
J
= 125°C
10
4
2
25
T
J
T
= 25°C
J
5
= -55°C
50
12
3
6
<0.5 % DUTY CYCLE
250µs PULSE TEST
7
75
T
J
= 25°C.
14
4
8
J
100 125
= 25°C)
9
16
10
5
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
160
140
120
100
180
160
140
120
100
5.0
4.0
3.0
2.0
1.0
80
60
40
20
16
14
12
10
80
60
40
20
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
0
0
-50
V
0
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 75A
-25
50
V
T
GE
T
T
25
C
J
1
= 15V.
J
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
= 125°C
FIGURE 4, Gate Charge
100
0
GATE CHARGE (nC)
V
T
CE
J
25
V
= 25°C
50
= 600V
CE
2
150
= 240V
50
200
75
3
75 100 125 150
250
V
CE
100
4
= 960V
300
J
= 125°C)
350
125
5