APT75GP120JDQ3 Microsemi Power Products Group, APT75GP120JDQ3 Datasheet - Page 5

• Manufacturer Part Number: APT75GP120JDQ3
• Description: IGBT 1200V 128A 543W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT75GP120JDQ3

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 75A
• Current - Collector (ic) (max): 128A
• Current - Collector Cutoff (max): 1.25mA
• Input Capacitance (cies) @ Vce: 7.04nF @ 25V
• Power - Max: 543W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT75GP120JDQ3MI; APT75GP120JDQ3MI

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature (°C)
20,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
1,000
0.25
0.20
0.15
0.10
0.05
500
100
V
50
10
CE
0
0
Junction
temp (°C)
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
(watts)
Power
10
0.05
0.9
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
10
0.0221
0.0498
0.158
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
res
ies
oes
0.0014
0.0416
0.543
50
10
SINGLE PULSE
-3
Figure 20, Operating Frequency vs Collector Current
50
10
5
1
20
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 5Ω
350
300
250
200
150
100
= XXXV
Figure 18,Minimim Switching Safe Operating Area
-2
50
35
0
°
I
°
C
C
0
C
V
, COLLECTOR CURRENT (A)
CE
, COLLECTOR TO EMITTER VOLTAGE
50
200
60
Note:
400
Peak T J = P DM x Z θJC + T C
10
Duty Factor D =
80
-1
t 1
600
95
t 2
APT75GP120JDQ3
800
t 1
110
/
t 2
F
f
f
P
max1
max2
max
diss
1000
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f