APTGT100SK120D1G Microsemi Power Products Group, APTGT100SK120D1G Datasheet
APTGT100SK120D1G
Specifications of APTGT100SK120D1G
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APTGT100SK120D1G Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT100SK120D1G V I Application • AC and DC motor control 3 • Switched Mode Power Supplies Features • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current RRM I DC Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy rr APTGT100SK120D1G = 25°C unless otherwise specified j Test Conditions 1200V 25° 15V 100A T = 125°C C ...
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... Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 APTGT100SK120D1G IGBT Diode For terminals M5 To Heatsink M6 Forward Characteristic of diode 200 V =600V CE D=50% 150 R =7.5 Ω ZCS G T =125°C ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT100SK120D1G =15V) GE ...